Crucible-Free Single Crystal Growth Apparatus Thermal Management
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Solution Overview
Problem
Existing single crystal manufacturing apparatuses without crucibles face challenges in producing large-size crystals due to excessive heat dissipation, particularly for materials with high melting points above 1,500°C, as they lack effective thermal insulation and heat management.
Innovation Solution
A single crystal manufacturing apparatus with an insulated space, induction heating coil, thermal insulation plate, and support shaft, which includes a thermal insulation material and a heating element for controlled heat distribution, allowing for the growth of large-size crystals by minimizing heat dissipation and maintaining high temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If infrared light irradiation is used to form melt on seed crystal surface, then single crystal can be grown without crucible, but heat dissipation becomes excessive for high melting point materials
Solution Approach 1:
The apparatus divides the growth chamber into multiple zones with different thermal insulation levels. The lower portion has enhanced insulation to reduce heat loss, while the upper portion allows heat dissipation to control crystal growth. This segmentation enables maintaining high temperatures for high melting point materials without requiring a crucible.
Solution Approach 2:
A susceptor is introduced as an intermediary component that absorbs induction heating energy and converts it to thermal energy, which then heats the crystal growth chamber. This indirect heating method through the susceptor allows for better heat distribution and reduced heat loss compared to direct infrared irradiation.
2Ease of operation
If wide open space is provided around crystal growth surface, then infrared light can reach the crystal, but heat dissipation increases and large-size crystal growth becomes difficult
Solution Approach 1:
The growth chamber is segmented into a lower highly-insulated zone for heat retention and an upper zone with controlled insulation for heat dissipation. This allows the crystal to receive adequate heating while preventing excessive heat loss that would occur in a completely open configuration.
Solution Approach 2:
The patent replaces direct infrared light irradiation with induction heating through a susceptor. This substitution eliminates the need for wide open spaces required for infrared light paths, as induction heating can be contained within the insulated chamber structure.
3Use of energy by moving object
If induction heating coil is placed outside insulated space, then heating efficiency improves, but heat distribution control becomes challenging
Solution Approach 1:
The susceptor acts as an intermediary between the induction heating coil and the crystal growth chamber. The susceptor converts electromagnetic energy from the coil into thermal energy, providing uniform heat distribution throughout the chamber while maintaining high heating efficiency. This intermediate conversion step solves both the efficiency and uniformity challenges.
Solution Approach 2:
The patent optimizes the frequency and power parameters of the induction heating coil to achieve both high heating efficiency and uniform heat distribution. By adjusting these parameters, the system can efficiently heat the susceptor while ensuring uniform thermal distribution in the crystal growth zone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the production of large-size single crystals without using a crucible, reducing facility costs and maintaining high purity, while effectively managing heat dissipation to support the growth of materials with high melting points.
Implementation Method 1
an induction heating coil placed outside the insulated space
Implementation Method 2
a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil
Implementation Method 3
an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus
Data Source
AI summary
A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.


