Crystal Growth Apparatus with Multiple Deposition Sites
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Solution Overview
Problem
Existing methods for growing compound crystals, such as silicon carbide (SiC) and gallium nitride (GaN), face challenges in achieving stable and rapid production with minimal defects, particularly due to difficulties in maintaining consistent thermal gradients and managing the composition of raw materials over time.
Innovation Solution
A crystal growth apparatus with multiple deposition sites is proposed, which creates 2D or 3D thermal gradients at multiple deposition sites using an auxiliary heater or deposition heat sink, along with thermal field adjustment components, to stabilize and accelerate the growth of compound crystals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the sublimation method is used for silicon carbide crystal growth, then mass production is achieved, but the growth rate is slow and defects are numerous
Solution Approach 1:
The heating cavity is divided into multiple heating zones with independent temperature control, allowing different regions to have optimized thermal conditions for both rapid growth and high quality. The crucible is segmented into multiple deposition sites, each capable of growing crystals under tailored thermal gradients.
Solution Approach 2:
Different regions of the heating cavity and crucible are provided with locally optimized thermal conditions through independent heating zones and thermal field adjustment components. Each deposition site can maintain specific thermal gradients suitable for high-quality crystal growth while the overall system enables mass production.
2Manufacturing precision
If conventional solution method is used for compound crystal growth, then fewer defects are obtained, but the composition of raw materials changes over time making stable long-term growth difficult
Solution Approach 1:
The system incorporates thermal field adjustment components that can monitor and compensate for changes in raw material composition over time. By actively adjusting thermal parameters in response to composition changes, the system maintains stable crystal growth conditions for extended periods.
Solution Approach 2:
The system dynamically adjusts thermal parameters including temperature gradients, heating rates, and zone temperatures to compensate for raw material composition changes. This allows the maintenance of optimal growth conditions despite evolving material properties during prolonged operation.
3Manufacturing precision
If high temperature growth is used for GaN crystals, then high-quality crystals are obtained, but the process is time-consuming and requires precise temperature management
Solution Approach 1:
The heating cavity is divided into multiple heating zones that can operate at different temperatures simultaneously. This allows different stages of crystal growth to occur in parallel under optimized conditions, reducing total growth time while maintaining high quality through localized temperature control.
Solution Approach 2:
Multiple deposition sites in the crucible allow continuous crystal growth operation. While one site completes its growth cycle, another can begin, ensuring continuous productive action and reducing overall time loss between growth cycles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the stable and rapid production of compound crystals with fewer defects by maintaining precise thermal control across multiple deposition sites, thereby improving the quality and yield of crystals such as SiC and GaN.
Implementation Method 1
creating 2D or 3D thermal gradients at multiple deposition sites
Implementation Method 2
an auxiliary heater or a deposition heat sink, so that at least one thermal field inside the heating cavity is formed with a 2D or a 3D thermal gradient
Implementation Method 3
The source materials undergo evaporation within these thermal fields, and with the assistance of a filter, stable and rapid production of compound crystals
Implementation Method 4
The crystal growth method by the sublimation method... The crystal growth by the sublimation method is a precipitation phenomenon from the gas phase
Implementation Method 5
with the assistance of a filter, stable and rapid production of compound crystals
Implementation Method 6
When silicon carbide is heated at normal pressure, it sublimates at a temperature of about 2000°C
Data Source
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AI summary
The present invention discloses a crystal growth apparatus with multiple deposition sites in, which mainly includes: a heating cavity with a rotatable pillar inside; at least one set of heating bearing components connected to the rotatable pillar, and the heating bearing component includes a crucible, a filter, a plurality of deposition sites, the crucible has a plurality of source materials; a heat generator, arranged inside the heating cavity, for providing the heat energy to the heating cavity; and a plurality of rigid devices, as an auxiliary heater or a deposition heat sink, so that at least one thermal field inside the heating cavity is formed with a 2D or a 3D thermal gradient. The invention further discloses a crystal growth process with multiple deposition sites. By forming 2D or 3D thermal gradients at multiple deposition sites, compound crystals with fewer defects can be stably produced.