Crystal Preparation Guide for Stable Melt Growth

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Solution Overview

Problem

Existing crystal preparation methods using liquid phase techniques face challenges such as volatile components segregating, spontaneous nucleation, and temperature fluctuations during crystal growth, which affect the normal growth of crystals.

Innovation Solution

A crystal preparation device and method utilizing a guide component with a barrel and transmission mechanism to control the growth process, including a barrel with specific dimensions and through holes, and a temperature measurement device to maintain a stable temperature field and liquid level.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If high temperature heating is used to melt raw materials for crystal growth, then the melting and growth process can proceed, but volatile components segregate and spontaneous nucleation occurs

Engineering Contradiction:
Improveheating temperatureVSAvoidmelt component stability
Core Design Contradiction:
TemperatureVSStability of the object's composition

Solution Approach 1:

A guide component is introduced as an intermediary between the heating component and the raw material. This guide component controls the heating process and melt flow, preventing direct high-temperature exposure that causes volatility and segregation, thereby maintaining melt composition stability while enabling crystal growth

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent controls and adjusts temperature parameters during the heating process to prevent excessive volatility. By optimizing the heating temperature and rate parameters, the system achieves sufficient melting for crystal growth while minimizing component segregation and spontaneous nucleation

Inventive Principle:
Principle #35Parameter changes

2Productivity

If the melt surface changes during pulling growth, then crystal growth can proceed, but temperature field changes affect normal crystal growth

Engineering Contradiction:
Improvecrystal growth rateVSAvoidtemperature field stability
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent implements a feedback control mechanism where the position of the melt surface is monitored and used to adjust the pulling growth process. This feedback loop maintains temperature field stability by compensating for melt surface changes, ensuring normal crystal growth while maintaining productivity

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The guide component is designed to maintain an equipotential temperature field around the crystal growth interface. By controlling the thermal environment through the guide component, the system compensates for temperature variations caused by melt surface changes, creating stable growth conditions

Inventive Principle:
Principle #12Equipotentiality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution ensures stable crystal growth by maintaining a constant liquid level and temperature field, reducing volatile component segregation, and preventing spontaneous nucleation, thereby improving crystal quality.

Implementation Method 1

heating the growth chamber to form a raw material melt

Methodology Applied
Scientific EffectHeating: Heating

Implementation Method 2

growing a crystal based on the seed crystal and the raw material melt

Methodology Applied
Scientific EffectCrystallisation: Crystallisation

Data Source

PatentUS20250223719A1Crystal preparation devices and crystal preparation methods
Publication Date: 2025.07.10 MEISHAN BOYA ADVANCED MATERIALS CO LTD
  • US20250223719A1 patent drawing
  • US20250223719A1 patent drawing
  • US20250223719A1 patent drawing

AI summary

The embodiments of the present disclosure provide a crystal preparation device and a crystal preparation method. The crystal preparation device comprises a growth chamber configured to place a raw material; a heating component configured to heat the growth chamber; a pulling component configured for pulling growth; and a guide component in a transmission connection with the pulling component. The crystal preparation method comprises providing a raw material in the growth chamber; descending the pulling component bonded with a seed crystal to a vicinity of the raw material, the pulling component being in transmission connection with the guide component and at least a portion of the pulling component being located in the guide component; heating the growth chamber to form a raw material melt; and growing a crystal based on the seed crystal and the raw material melt through a transmission movement of the pulling component and the guide component.