Crystalline Alignment Layer Laminate for Oxide Substrates
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Solution Overview
Problem
Conventional methods for forming a crystal orientation layer laminated structure are limited to specific base substrates like Si (111), Si (100), W, or TiN, and fail to achieve oriented growth on oxides or nitrides such as SiO2 or SiN, restricting the application of superlattice structures in electronic devices.
Innovation Solution
A crystal orientation layer laminated structure is developed, featuring a substrate with an orientation control layer made of germanium, silicon, or tungsten, and a first crystal orientation layer with a hexagonal structure, followed by a second crystal orientation layer with a cubic structure, allowing for wide substrate material selection and controlled crystal orientation, enabling the formation of a superlattice structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional methods are used to form crystal orientation layer laminated structure, then the structure can be formed on specific base substrates like Si (111), Si (100), W, or TiN, but the application is restricted and cannot be applied to oxides or nitrides such as SiO2 or SiN
Solution Approach 1:
The patent introduces an orientation control layer as an intermediary between the substrate and the crystal orientation layers. This control layer, made of specific materials with particular thickness ranges, mediates the interaction between the substrate and the crystal layers, enabling oriented growth on substrates that previously could not support it, such as SiO2 and SiN.
Solution Approach 2:
The patent changes the parameters of the substrate interface by introducing the orientation control layer with specific material composition and thickness parameters. This allows the system to achieve oriented crystal growth on substrates with different material properties, effectively changing the interface characteristics to be compatible with a broader range of substrates.
2Manufacturing precision
If superlattice structure is formed without orientation control layer, then the structure can be formed on limited substrates, but the crystal orientation cannot be controlled on oxide or nitride substrates
Solution Approach 1:
The orientation control layer serves as a mediator that enables precise crystal orientation control while expanding substrate compatibility. It provides the necessary template and interface for oriented growth without being limited to specific substrate types.
Solution Approach 2:
The orientation control layer performs multiple functions: it enables crystal orientation control, expands substrate compatibility to include oxides and nitrides, and maintains the superlattice structure formation capability. This multi-functional layer increases the universality of the manufacturing process.
3Reliability
If conventional crystal layers are used, then the structure is limited to specific applications, but the unique properties of topological insulators and Rashba effects cannot be achieved
Solution Approach 1:
The patent employs composite material structures with specific crystal orientations and compositions, including layers designed to exhibit topological insulator properties and Rashba effects. This composite approach achieves enhanced electronic memory performance while managing the complexity through systematic layer design.
Solution Approach 2:
The patent applies local quality by creating specific crystal orientations and material compositions in different layers to achieve particular functions. The orientation control layer has specific properties for enabling growth, while subsequent layers have properties optimized for topological insulator behavior and Rashba effects, with each layer having locally optimized characteristics.
Data Source
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AI summary
A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation