Crystalline Oxide Semiconductor Layer for Power Devices
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Solution Overview
Problem
Current methods for producing p-type semiconductor devices using gallium oxide (Ga2O3) face challenges such as low raw material concentration during film formation, difficulty in producing Rh2O3 monocrystals, and poor electrical characteristics, including low mobility and narrow band gap, which hinder their application in power devices and LEDs.
Innovation Solution
A semiconductor device is developed with a crystalline oxide semiconductor layer having a band gap of 4.5 eV or more and a field-effect mobility of 10 cm2/V·s or higher, incorporating a high-resistance oxide film with a resistance of 1.0×106 Ω·cm or higher, which improves electrical characteristics and enables effective use in power devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Rh2O3 is used as a p-type semiconductor material, then p-type conductivity is achieved, but the raw material concentration becomes particularly low at the time of film formation which affects film formation and makes it difficult to produce Rh2O3 monocrystal
Solution Approach 1:
The patent changes the material parameter from Rh2O3 to Ir2O3, which has different physical and chemical properties including higher raw material concentration during film formation, enabling successful film formation and monocrystal production while maintaining p-type semiconductor functionality
Solution Approach 2:
The patent replaces the difficult-to-manufacture Rh2O3 material with Ir2O3 that is easier to handle and process, sacrificing the ideal of using the originally selected material but achieving practical manufacturability
2Reliability
If delafossite or oxychalcogenide p-type semiconductors are used, then p-type conductivity is achieved, but the mobility is about 1 cm2/V·s or lower resulting in poor electrical characteristics
Solution Approach 1:
The patent changes the material composition from delafossite or oxychalcogenide to Ir2O3-based p-type semiconductor, fundamentally altering the electrical parameters including mobility and band gap to achieve superior electrical characteristics with mobility of 10 cm2/V·s or higher
3Reliability
If ZnRh2O4 is used as a p-type semiconductor, then p-type conductivity is achieved, but the mobility is low and the band gap is narrow making it impossible to use in LEDs and power devices
Solution Approach 1:
The patent replaces ZnRh2O4 with Ir2O3-based p-type semiconductor, changing the material parameters to achieve high mobility (10 cm2/V·s or higher) and wide band gap (4.5 eV or more), thereby enabling application in LEDs and power devices
4Reliability
If ion implantation is used to create p-type semiconductor, then p-type conductivity is achieved, but junction leakage current is generated which affects electrical characteristics
Solution Approach 1:
The patent extracts and eliminates the harmful effect of junction leakage current by abandoning the ion implantation process and using alternative material (Ir2O3-based semiconductor) that achieves p-type conductivity without this detrimental side effect
Solution Approach 2:
The patent converts the approach from trying to achieve p-type conductivity through ion implantation (which creates leakage) to using intrinsic p-type materials like Ir2O3 that naturally provide p-type conductivity without generating junction leakage current
Data Source
AI summary
There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm2/V·s or higher.