Crystalline Oxide Semiconductor TFTs for Higher Mobility at Lower Heat
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Solution Overview
Problem
Current thin film transistors in flat panel displays face challenges with low electron mobility and stability due to amorphous metal oxide semiconductor materials, which result in poor performance and reliability.
Innovation Solution
A thin film transistor design incorporating a semiconductor layer with crystalline metal oxide semiconductor structures, formed by inducing crystals in a metal oxide semiconductor material using a metal or metal oxide layer at controlled temperatures, improving atomic order and reducing defects, and a manufacturing method that involves stacking and heating layers to achieve these crystalline structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If amorphous metal oxide semiconductor materials are used in thin film transistors, then the manufacturing process is simpler and processing temperatures are lower, but electron mobility and device stability are reduced
Solution Approach 1:
The patent applies phase transition by heating the metal oxide semiconductor layer to transform it from an amorphous phase to a crystalline phase. This phase transition occurs when the amorphous metal oxide semiconductor material is heated to a temperature sufficient to induce crystallization, thereby improving electron mobility and device stability while maintaining the simplicity of the manufacturing process.
2Reliability
If crystalline metal oxide semiconductor structures are formed by heating, then electron mobility and stability are improved, but processing temperature and energy consumption increase
Solution Approach 1:
The patent utilizes parameter changes by adjusting the heating temperature and time to optimize the crystallization process. By carefully controlling these parameters, the patent achieves the desired crystalline structure improvement in electron mobility and stability while minimizing the processing temperature and energy consumption required for the phase transition.
3Manufacturing precision
If crystalline structures are induced in metal oxide semiconductor material, then atomic order increases and defects are reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The patent applies self-service by allowing the metal oxide semiconductor material to undergo spontaneous crystallization when heated to the appropriate temperature. The material's inherent properties enable it to reorganize into a crystalline structure without requiring complex external interventions or additional processing steps, thereby improving atomic order while keeping the manufacturing process relatively simple.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach significantly enhances electron mobility and bias stability, improving the overall performance and reliability of thin film transistors by reducing oxygen vacancies and structural defects, while also allowing for lower processing temperatures suitable for flexible display panels.
Implementation Method 1
inducing crystals in a metal oxide semiconductor material using a metal or metal oxide layer at controlled temperatures
Implementation Method 2
formed by inducing crystals in a metal oxide semiconductor material using a metal or metal oxide layer at controlled temperatures
Data Source
AI summary
A thin film transistor; includes a substrate; and a semiconductor layer provided on the substrate. The semiconductor layer includes a first surface proximate to the substrate and a second surface away from the substrate, and the semiconductor layer is made of a metal oxide semiconductor material. The semiconductor layer has a channel region; and crystals of metal oxide semiconductor are formed at least in the channel region of the semiconductor layer and proximate to the first surface or the second surface.