Crystalline Terminating Oxide Layers for XOI Fabrication
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Solution Overview
Problem
Conventional methods fail to achieve a feasible and high-quality fabrication of compound semiconductor on insulator (XOI) structures due to high conductivity issues at the interface between compound semiconductors and insulators, leading to defects and reduced mobility in semiconductor devices.
Innovation Solution
The use of crystalline terminating oxide layers for epitaxial growth of highly ordered compound semiconductor layers on electrical insulating layers, which involves arranging a first and second crystalline terminating oxide layer with III-V compound semiconductor layers in between, to create a reliable XOI structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional passivation treatment (chemical sulphur passivation or ALD-based growth treatment) is applied to reduce substrate-insulator reaction effects, then interface conductivity is reduced, but the epitaxial stack structure quality is insufficient or mass production viability is compromised
Solution Approach 1:
A silicon oxide layer is introduced as an intermediary layer between the compound semiconductor substrate and the insulator. This intermediate silicon oxide layer acts as a buffer that prevents direct harmful reactions between the substrate and insulator, while maintaining low interface conductivity and enabling high-quality epitaxial growth of the semiconductor layers above it.
2Ease of operation
If hetero-epitaxial growth of complex multilayers is performed on silicon substrates, then compound semiconductor devices with high mobility are achieved, but high defect densities and junction leakage currents occur due to crystal lattice mismatch
Solution Approach 1:
The silicon oxide layer serves as a mediator that accommodates the crystal lattice mismatch between the silicon substrate and the compound semiconductor multilayers. This intermediate layer reduces stress and prevents dislocation propagation, thereby reducing defect densities while preserving the high mobility properties of the epitaxially grown compound semiconductor layers.
3Reliability
If an insulator is grown on a compound semiconductor substrate, then electrical insulation is achieved, but the substrate reacts with insulator molecules creating electronic defect states at the interface
Solution Approach 1:
The silicon oxide layer is positioned between the compound semiconductor substrate and the insulator, acting as a protective intermediary. This intermediate layer prevents direct chemical reactions between the substrate and insulator molecules, thereby eliminating the formation of harmful electronic defect states at the interface while maintaining effective electrical insulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the growth of thin, highly ordered crystalline terminating oxide layers, facilitating epitaxial growth and reducing defects, thereby improving the quality and mobility of compound semiconductor devices.
Implementation Method 1
crystalline terminating oxide layers for epitaxial growth of highly ordered compound semiconductor layers on electrical insulating layers
Implementation Method 2
growth of thin, highly ordered crystalline terminating oxide layers, facilitating epitaxial growth and reducing defects
Data Source
AI summary
Disclosed is a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprises a plurality of layers. The method of fabricating the semiconductor device comprises obtaining a substrate layer, arranging a first corresponding crystalline terminating oxide layer on the substrate layer, arranging at least one semiconductor layer on the first crystalline terminating oxide layer, arranging a second corresponding crystalline terminating oxide layer on the at least one semiconductor layer, and arranging an electrical insulating layer on the second crystalline terminating oxide layer.