CS-ALD Shower Head With Independent Blocks
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Solution Overview
Problem
The increasing complexity of semiconductor device structures complicates deposition and etching processes, leading to decreased productivity and yield, as existing atomic layer deposition (ALD) methods are slow and inefficient for complex structures.
Innovation Solution
A combinatorial spatial atomic layer deposition (CS-ALD) apparatus with a shower head configuration featuring independently controlled shower blocks and nozzles, including source gas, purge gas, and reactant gas injection areas, along with separate exhaust passages to optimize deposition and etching processes, allowing for uniform thin film deposition and etching across larger areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional atomic layer deposition (ALD) method is used, then uniform thin film deposition is achieved, but deposition speed is slow
Solution Approach 1:
The shower head is divided into multiple independently controllable shower blocks, each capable of performing different deposition processes. This segmentation allows simultaneous execution of multiple deposition steps across different substrate areas, thereby increasing overall deposition speed while maintaining uniform film quality through localized process optimization.
Solution Approach 2:
The patent transitions from conventional temporal sequential ALD processes to a spatially parallel configuration where multiple shower blocks operate simultaneously on different substrate regions. This dimensional shift from time-based to space-based process execution dramatically increases deposition throughput while preserving film uniformity through independent control of each spatial unit.
2Productivity
If spatial ALD method is used, then deposition speed increases, but process control complexity increases
Solution Approach 1:
By dividing the shower head into modular shower blocks with independent control systems, the patent manages complexity through functional segmentation. Each block can be controlled independently, allowing simplified control logic for each unit while achieving complex overall process capabilities through coordination of multiple simple units.
Solution Approach 2:
The system employs dynamic control where shower blocks can be selectively activated or deactivated based on real-time process requirements. This dynamic adaptability allows the system to handle complex deposition scenarios by engaging only the necessary blocks, thereby managing control complexity while maintaining high productivity.
3Manufacturing precision
If multiple deposition processes are performed sequentially, then process precision is maintained, but processing time increases
Solution Approach 1:
The patent merges multiple sequential deposition processes into simultaneous parallel operations by allocating different shower blocks to different deposition tasks. This consolidation executes what would traditionally be sequential steps concurrently, reducing total processing time while maintaining precision through independent control of each merged process stream.
Solution Approach 2:
By enabling multiple shower blocks to operate continuously and simultaneously on different substrate regions, the system eliminates idle time between sequential processes. The continuous parallel execution of multiple deposition tasks reduces overall processing time while maintaining process precision through sustained controlled operation of all blocks.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the determination of optimum process conditions through reduced experimentation, facilitating efficient and uniform thin film deposition and etching across complex semiconductor structures, thereby enhancing productivity and yield.
Implementation Method 1
a first source gas injection nozzle, a first purge gas injection nozzle, a reactant gas injection nozzle
Data Source
AI summary
A shower head of a combinatorial spatial atomic layer deposition (CS-ALD) apparatus may be provided. The shower head of the CS-ALD apparatus may include a plurality of shower blocks. Each of shower blocks may include a plurality of unit modules. Each of the shower blocks and each of the unit modules may be controlled independently from each other. Each of the plurality of unit modules may include a source gas injection nozzle, a purge gas injection nozzle, a reactant gas injection nozzle, and exhaust areas between the injection nozzles. The plurality of shower blocks may be separated from each other. Gas injection areas of the injection nozzles may be separated from the exhaust area.