CSP Resin Thickness Layout for Semiconductor Warpage Reduction
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Solution Overview
Problem
Existing semiconductor devices in CSP structures face challenges in reducing warpage, which is influenced by the size of semiconductor chips, electrode size, and thickness of covering resin bodies, regardless of chip size.
Innovation Solution
A semiconductor device design that includes a supporting body with thin film and thick film metal electrodes, and a resin structure with a first resin body covering the thick film metal body, featuring a second resin body on the opposing face or regions of varying thickness on the same face to manage stress and warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If large-sized semiconductor chips are used in CSP structures, then the warpage is reduced, but the device size increases
Solution Approach 1:
The patent applies local quality by creating a resin structure with non-uniform thickness distribution. The resin body has a first thickness in a first region and a second thickness different from the first thickness in a second region. This localized variation in resin thickness allows stress compensation in specific areas, reducing warpage without requiring an overall increase in device size.
Solution Approach 2:
The patent changes the physical parameter of resin thickness to control warpage. By adjusting the thickness of the resin body in different regions (first thickness vs. second thickness), the stress distribution is modified, thereby reducing warpage. This parameter change approach allows warpage control without proportionally increasing the overall device volume.
2Stability of the object's composition
If uniform thickness resin body is used, then manufacturing is simplified, but stress distribution is insufficient to reduce warpage
Solution Approach 1:
The patent implements local quality by specifying that the resin structure has different thicknesses in different regions. The first region has a first thickness and the second region has a second thickness, creating localized stress compensation zones. This approach improves warpage reduction while maintaining manufacturability through defined regional specifications.
3Reliability
If thick film metal body is added on thin film metal electrode, then electrical connectivity is improved, but stress and warpage increase
Solution Approach 1:
The patent changes the thickness parameter of the resin body to compensate for stress induced by the thick film metal body. By having the resin body with varying thickness (first thickness and second thickness), it provides stress compensation that counteracts the warpage caused by the thick metal film, thereby maintaining both electrical connectivity and dimensional stability.
Solution Approach 2:
The patent uses a composite structure combining thick film metal body on thin film metal electrode, with the resin body having different thickness regions. This composite approach allows the thick metal film to provide electrical connectivity while the differentially thicked resin structure compensates for the resulting stress and warpage.
Data Source
AI summary
A semiconductor device includes: a supporting body having first and second principal faces, and semiconductor elements; a thin film metal electrode on the first principal face; a thick film metal body on the thin film metal electrode; and a resin structure on the supporting body. The thick film metal body has a thickness greater than that of the thin film metal electrode. The resin structure includes a first resin body that covers a side of the thick film metal body. The resin structure has at least one of structures 1 and 2 as follows: in the structure 1, the resin structure further includes a second resin body on the second principal face; and in the structure 2, the first resin body includes first and second regions on the first principal face, and the second region has a thickness greater than that of the first region.