Cu Electrode Resin Coating to Prevent Insulating Layer Cracks
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Solution Overview
Problem
The existing semiconductor device structure is prone to cracks near the peripheral edge of the barrier electrode layer due to thermal expansion, as the outer-surface insulating film including copper oxide applies a concentrated load on the insulating layer, causing stress and potential cracking.
Innovation Solution
A semiconductor device design that includes an insulating layer, a barrier electrode layer, a Cu electrode layer with a copper oxide outer-surface insulating film, and a resin film that coats the Cu electrode layer, preventing direct contact between the Cu electrode layer and open air, thereby reducing the thickness of the outer-surface insulating film and minimizing thermal expansion-induced stress on the insulating layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the Cu electrode layer is exposed to open air, then the outer-surface insulating film including copper oxide forms and provides insulation, but the copper oxide applies concentrated load on the insulating layer causing stress and cracks
Solution Approach 1:
A resin film is introduced as an intermediary layer between the Cu electrode layer and the outer-surface insulating film. The resin film prevents direct contact between the Cu electrode layer and open air, thereby reducing the thickness of the copper oxide layer while maintaining insulation performance. This intermediary structure eliminates the concentrated load that causes cracks in the insulating layer.
Solution Approach 2:
The thickness of the outer-surface insulating film is reduced from a thick layer (when directly exposed to air) to a thin layer (when protected by resin film). This parameter change in the insulating film thickness reduces the stress and concentrated load on the underlying insulating layer, preventing crack formation while maintaining sufficient insulation properties.
2Reliability
If the outer-surface insulating film is made thicker to improve insulation, then insulation performance increases, but thermal expansion-induced stress on the insulating layer increases
Solution Approach 1:
The thickness of the outer-surface insulating film is optimized to be thin rather than thick. This parameter change reduces the thermal expansion stress on the insulating layer while the resin film ensures that the film remains thin by preventing direct air exposure and subsequent thick oxide formation. Insulation performance is maintained despite the reduced thickness.
3Reliability
If the Cu electrode layer is allowed to oxidize naturally, then a protective insulating film forms, but the concentrated load from the oxide film causes cracks near the peripheral edge of the barrier electrode layer
Solution Approach 1:
The resin film serves as an intermediary that controls the oxidation process of the Cu electrode layer. By preventing direct contact with open air, the resin film limits oxide formation to a thin layer that does not generate concentrated loads, thereby eliminating the harmful effect of crack formation near the peripheral edge of the barrier electrode layer.
Solution Approach 2:
Instead of allowing uncontrolled oxidation that creates thick, harmful oxide layers, the resin film converts the oxidation process into a controlled, beneficial thin-film formation. The thin oxide layer provides sufficient insulation without generating the concentrated loads that cause cracks, thus transforming a potentially harmful process into a beneficial one.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively prevents cracks in the insulating layer by reducing the load applied from the Cu electrode layer and the outer-surface insulating film, ensuring structural integrity during thermal expansion.
Implementation Method 1
an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer
Implementation Method 2
cracks near the peripheral edge of the barrier electrode layer due to thermal expansion
Data Source
AI summary
A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.