Cu Electrode Insulating Structure for Thermal Stress Crack Prevention
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Solution Overview
Problem
The existing semiconductor device structure is prone to cracks near the peripheral edge of the barrier electrode layer due to thermal expansion, as the outer-surface insulating film including copper oxide applies additional load to the insulating layer, concentrating stress and causing cracks.
Innovation Solution
A semiconductor device design where the outer-surface insulating film coats the Cu electrode layer with an interval from the insulating layer, and a resin film is interposed between the Cu electrode layer and the outer-surface insulating film, preventing direct contact and reducing thermal expansion-induced stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the outer-surface insulating film including copper oxide directly contacts the insulating layer, then the structural integrity is improved, but thermal expansion stress concentrates and causes cracks
Solution Approach 1:
A resin film is introduced as an intermediary layer between the Cu electrode layer and the insulating layer. This resin film acts as a stress buffer that absorbs thermal expansion differences, preventing stress concentration at the interface while maintaining structural integrity. The resin film's flexible properties allow it to accommodate thermal expansion without transmitting excessive stress to the insulating layer, thereby preventing cracks.
2Device complexity
If the outer-surface insulating film directly contacts the insulating layer, then the device complexity is reduced, but stress concentration occurs due to thermal expansion
Solution Approach 1:
The resin film serves as a mediator that decouples the thermal expansion stress between the Cu electrode layer and the insulating layer. By placing this intermediate layer, the patent manages stress distribution without significantly increasing overall device complexity, as the resin film can be integrated into existing manufacturing processes.
3Reliability
If the outer-surface insulating film coats the Cu electrode layer with interval from insulating layer, then crack prevention is improved, but the load-bearing capacity is reduced
Solution Approach 1:
The resin film is designed with specific mechanical properties that allow it to function as both a stress buffer and a load-bearing element. Its composition and thickness are optimized to absorb thermal expansion stress while maintaining sufficient load-bearing capacity to support the Cu electrode layer and transmit necessary mechanical loads.
Solution Approach 2:
The patent optimizes parameters such as resin film thickness, composition, and cross-linking density to achieve the right balance between stress absorption and load-bearing capacity. By adjusting these parameters, the resin film can effectively prevent cracks while maintaining adequate structural strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively prevents cracks in the insulating layer by reducing the load applied from the Cu electrode layer and outer-surface insulating film, ensuring structural integrity during thermal expansion.
Implementation Method 1
an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer
Implementation Method 2
prone to cracks near the peripheral edge of the barrier electrode layer due to thermal expansion
Data Source
AI summary
A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.