Cu-Sn Pad Interconnection Structure for Gap-Free Dielectric Adhesion

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Solution Overview

Problem

Current semiconductor devices face challenges in achieving high integration and speed due to limitations in interconnection structures and dielectric layers, leading to gaps and reduced adhesion between buffer dielectric layers, which affect yield and reliability.

Innovation Solution

A semiconductor device design featuring a pad interconnection structure with a copper-tin alloy, where the copper content increases towards the central part and tin content decreases, forming a lattice structure with mixed FCC and diamond cubic structures, and an annealing process to reduce the volume of the pad connector, ensuring contact between buffer dielectric layers and enhancing adhesion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a pad interconnection structure with copper-tin alloy is used, then adhesion between dielectric layers is improved, but device complexity increases

Engineering Contradiction:

Improveadhesion between dielectric layersVSAvoidinterconnection structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The pad interconnection structure uses a copper-tin alloy composite material where copper provides electrical conductivity and tin provides oxidation resistance and adhesion enhancement. This composite approach resolves the contradiction by combining materials with complementary properties to simultaneously improve reliability and maintain manufacturability.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The pad connector has a non-uniform composition with copper content increasing from the outer part toward the central part, creating local quality variations. The outer region has higher tin content for adhesion and oxidation resistance, while the central region has higher copper content for electrical conductivity, resolving the contradiction through spatially differentiated material properties.

Inventive Principle:

Principle #3Local quality

2Reliability

If the pad connector volume is reduced through annealing, then gaps between dielectric layers are eliminated, but manufacturing precision requirements increase

Engineering Contradiction:

Improvegap elimination between dielectric layersVSAvoidannealing process control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The annealing process changes the physical parameters of the pad connector by heating it to a specific temperature range to induce controlled diffusion and volume reduction. This transforms the material state and eliminates gaps between dielectric layers, resolving the contradiction through controlled parameter modification.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The annealing process is performed as a preliminary step before final assembly to pre-establish proper contact between dielectric layers. By eliminating gaps early in the manufacturing process, subsequent steps benefit from improved alignment and reduced precision requirements, resolving the contradiction through sequencing.

Inventive Principle:

Principle #10Preliminary action

3Reliability

If copper content increases toward the central part of the pad connector, then electrical conductivity is improved, but susceptibility to oxidation increases

Engineering Contradiction:

Improveelectrical conductivityVSAvoidoxidation susceptibility

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The pad connector exhibits spatially varying composition with copper concentration increasing toward the central part and tin concentration decreasing accordingly. This local quality distribution optimizes electrical conductivity in the high-current central region while maintaining oxidation resistance through tin enrichment at the outer surfaces exposed to environment.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The copper-tin alloy composite structure combines the high electrical conductivity of copper with the oxidation resistance of tin. The gradient composition allows both materials to contribute their advantageous properties to different regions of the pad connector, resolving the contradiction between conductivity and oxidation susceptibility.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution improves the yield and reliability of semiconductor devices by eliminating gaps between dielectric layers, increasing adhesion force, and preventing galvanic corrosion, thereby enhancing the overall performance and stability of the semiconductor package.

Implementation Method 1

an annealing process to reduce the volume of the pad connector, ensuring contact between buffer dielectric layers and enhancing adhesion

Methodology Applied

Scientific EffectAnnealing: Annealing

Data Source

PatentUS20250022823A1Semiconductor device and semiconductor package including the same

Publication Date: 2025.01.16 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.