Cu2O Photoelectric Layer Doping for Solar Cell Efficiency
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Solution Overview
Problem
Multi-junction solar cells face challenges in achieving high efficiency due to the limitations of cuprous oxide (Cu2O) layers, which have a wide band gap, making it difficult to combine with silicon-based cells without narrowing the band gap and compromising transparency, and existing doping methods fail to enhance hole concentration effectively.
Innovation Solution
A photoelectric conversion layer based on Cu2O with a p-type dopant concentration of Ge, Ta, or In is introduced, maintaining a band gap of 2.10-2.30 eV and ensuring high transparency, by carefully controlling the dopant concentration between 1×10^15 and 1×10^20 atoms/cm^3, and using a mixed gas atmosphere during sputtering to form a transparent and large-particle-diameter thin film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If cuprous oxide (Cu2O) layer with wide band gap is used, then transparency is improved, but hole concentration is insufficient
Solution Approach 1:
The patent applies parameter changes by precisely controlling the dopant concentration (1×10^15 to 1×10^20 atoms/cm³) and band gap (2.10-2.30 eV) to simultaneously achieve high hole concentration and maintain transparency. This resolves the contradiction by finding the optimal parameter range where both requirements are satisfied.
Solution Approach 2:
The patent introduces p-type dopants (Ge, Ta, or In) as intermediaries to enhance hole concentration in the Cu2O layer without compromising the band gap. These dopant elements act as mediators that provide additional charge carriers while maintaining the optical properties necessary for transparency.
2Quantity of substance
If existing doping methods are used, then manufacturing process is simple, but hole concentration enhancement is insufficient
Solution Approach 1:
The patent improves upon existing doping methods by specifying precise dopant concentration ranges (1×10^15 to 1×10^20 atoms/cm³) and selecting specific p-type dopant elements (Ge, Ta, or In). This parameter specification achieves superior hole concentration enhancement while maintaining manufacturing feasibility through sputtering in mixed gas atmosphere.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the hole concentration and carrier diffusion in the Cu2O layer, reducing recombination and maintaining high light transmissivity, thereby improving the efficiency of solar cells without altering the band gap, enabling effective combination with silicon-based cells in multi-junction configurations.
Implementation Method 1
contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In
Implementation Method 2
photoelectric conversion layer based on Cu2O
Implementation Method 3
using a mixed gas atmosphere during sputtering to form a transparent and large-particle-diameter thin film
Data Source
AI summary
The photoelectric conversion layer of an embodiment is based on Cu2O, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.