Cu2O Heterojunction Solar Cell With Transparent N-Type Oxide Layer
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Solution Overview
Problem
Current solar cells using cuprous oxide (Cu2O) for light-absorbing layers face challenges in achieving high conversion efficiency and cost-effectiveness.
Innovation Solution
A solar cell design incorporating a p-type light-absorbing layer made of cuprous oxide, a first n-type layer with specific compounds like Ga xM1 x2 M3 x4 M5 O x6, and an n-electrode, optimized for efficient light absorption and transmission, with adjustable band gap and refractive index to enhance conversion efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If cuprous oxide (Cu2O) is used as the light-absorbing layer material, then cost and safety are improved, but conversion efficiency is insufficient
Solution Approach 1:
The patent uses composite materials by combining cuprous oxide (Cu2O) with aluminum-gallium-oxide (Al-Ga-O) thin film to create a heterojunction structure. This composite approach allows the solar cell to maintain the cost and safety advantages of Cu2O while achieving higher conversion efficiency through the complementary properties of Al-Ga-O, which provides better electron transport and interface characteristics.
Solution Approach 2:
The patent applies parameter changes by optimizing the composition ratios of Al-Ga-O (specifically the Ga content and oxygen stoichiometry) to achieve the desired balance between transparency and electron transport. By adjusting the chemical composition parameters of the Al-Ga-O layer, the solar cell achieves improved conversion efficiency while maintaining the low-cost Cu2O absorber.
2Illumination intensity
If the n-type layer transparency is increased, then light transmission is improved, but electron transport capability deteriorates
Solution Approach 1:
The patent resolves this contradiction by precisely controlling the compositional parameters of the Al-Ga-O n-type layer. By adjusting the gallium content and oxygen stoichiometry (represented by the formula Ga x1 M1 x2 M2 x3 M3 x4 M4 x5 O x6 with specific x values), the material achieves optimal transparency while maintaining sufficient electron transport capability. The parameter optimization allows simultaneous satisfaction of both light transmission and electron transport requirements.
Solution Approach 2:
The heterojunction between Cu2O and Al-Ga-O creates a composite structure where each material contributes its strengths: Cu2O provides light absorption and Al-Ga-O provides transparent electron transport. This composite approach allows the n-type layer to be highly transparent while maintaining electron transport capability through the favorable band alignment and interface properties of the heterojunction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves solar cell conversion efficiency and transparency, enabling efficient energy harvesting in both top and bottom cells of a multi-junction solar cell, particularly when used with silicon as the bottom cell layer.
Implementation Method 1
a p-type light-absorbing layer which is located between the p-electrode and the n-electrode and mainly contains a cuprous oxide
Data Source
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AI summary
The solution to invention by the present invention provide a solar cell, a multi-junction solar cell, a solar cell module, and a photovoltaic power generation system having excellent conversion efficiency. A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gax1M1x2M2x3M3x4M4x5Ox6, the M1 being Hf and/or Zr, the M2 being one or more selected from the group consisting of In, Ti, and Zn, the M3 being Al and/or B, the M4 is one or more selected from the group consisting of Sn, Si, and Ge, the x1, the x2, and the x6 being more than 0, the x3, the x4, and the x5 being 0 or more, and the x6 when a sum of the x1, the x2, the x3, the x4, and the x5 is 2 being 3.0 or more and 3.8 or less.