CuA Optical Metrology Using Effective Medium Region Classification

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Solution Overview

Problem

Existing optical metrology techniques face challenges in accurately characterizing complementary metal-oxide-semiconductor (CMOS) under array (CuA) structures due to the influence of underlying CMOS circuitry on measurement data, particularly in 3D memory devices, where the CMOS structures are spatially varying and not periodic, limiting the effectiveness of current methods for process control.

Innovation Solution

The system employs unsupervised clustering of optical measurement data to classify CMOS structures into spatially-continuous regions, developing effective medium models for these regions, and using physics-based models to generate accurate metrology measurements by accounting for the spatial variations of CMOS structures, enabling precise characterization of memory array structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional optical metrology techniques are used to measure memory array structures, then measurement process is simple, but measurement accuracy deteriorates due to influence from underlying CMOS circuitry

Engineering Contradiction:
Improvemeasurement accuracyVSAvoidmeasurement process complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent segments the measurement process into distinct phases: training phase where measurement models are developed using training samples with known parameters, and measurement phase where the developed models are applied to test samples. This segmentation allows the complex task of accounting for CMOS influence to be handled during training, enabling accurate measurements during production without repeating the complex model development process.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary action by developing measurement models in advance using training samples before actual production measurements. The measurement models are trained to account for the influence of underlying CMOS circuitry on optical measurements. This preliminary model development enables accurate measurements of production samples without requiring complex real-time analysis during the measurement process.

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If measurement models account for spatially-varying CMOS structures, then measurement accuracy improves, but model complexity increases

Engineering Contradiction:
Improvemeasurement accuracyVSAvoidmodel complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies local quality by developing separate measurement models for different spatial regions of the wafer. The wafer is divided into multiple regions, and each region has its own measurement model that accounts for the specific characteristics of underlying CMOS structures in that region. This allows the model to capture spatial variations in CMOS influence without requiring a single overly complex global model.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses parameter changes by training measurement models with varying parameters that represent different CMOS structure configurations and spatial positions. The models learn to adjust parameters to account for the influence of underlying CMOS circuitry, enabling accurate measurements across different regions without explicitly modeling every detail of the CMOS structures.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If unsupervised clustering is used to identify spatial regions, then region classification accuracy improves, but processing time increases

Engineering Contradiction:
Improveregion classification accuracyVSAvoidprocessing time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent performs unsupervised clustering and region identification during the training phase as a preliminary action. By completing the computationally intensive clustering analysis before production measurements, the system establishes region classifications in advance. This allows rapid application of pre-determined region models during production without repeating the time-consuming clustering process.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent segments the wafer into multiple spatial regions using unsupervised clustering algorithms that analyze measurement data to identify distinct areas with different CMOS structure characteristics. This segmentation enables the system to handle spatial variations systematically by applying appropriate models to each region, improving classification accuracy while managing processing complexity.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20250004384A1Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of cua structures
Publication Date: 2025.01.02 KLA CORP
  • US20250004384A1 patent drawing
  • US20250004384A1 patent drawing
  • US20250004384A1 patent drawing

AI summary

A system, may include a controller configured to cause the processors to implement a measurement recipe by: receiving optical measurement data for training samples after a first process step for fabricating complementary metal-oxide-semiconductor (CMOS) under array (CuA) devices, wherein the CuA devices include first structures with a non-uniform spatial distribution; classifying the first structures into spatially-continuous regions based on unsupervised clustering; receiving optical measurement data for the training samples after a second process step, wherein the CuA devices after the second process step include periodic second structures above the first structures; developing effective medium models for the first structures; developing measurement models for determining measurements of the CuA devices; receiving optical measurement data for test samples after the second process step; and generating values of the metrology measurements of the second structures based on the optical measurement data for the test samples and the measurement models.