Cubic Boron Arsenide Crystals for High Thermal Conductivity
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Solution Overview
Problem
Current semiconductors lack materials with simultaneously high thermal conductivity and carrier mobility, essential for advanced electronic and optoelectronic devices.
Innovation Solution
Cubic boron arsenide (c-BAs) single crystals with controlled nucleation centers are produced using a two-step chemical vapor transport process, achieving ambipolar mobility greater than 1500 cm2V−1s−1 and thermal conductivity greater than 1000 Wm−1K−1 at room temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor materials are used, then manufacturing process is established, but thermal conductivity and carrier mobility cannot be simultaneously high
Solution Approach 1:
The patent applies parameter changes by optimizing the chemical vapor transport process parameters (temperature gradient, pressure, source material purity) to achieve the desired combination of high thermal conductivity and high carrier mobility in cubic boron arsenide crystals
Solution Approach 2:
The patent utilizes composite material approaches by combining purified boron and arsenic sources in a controlled chemical vapor transport process to create cubic boron arsenide with superior properties that neither parent material possesses alone
2Temperature
If high thermal conductivity is achieved, then heat dissipation performance improves, but carrier mobility typically decreases
Solution Approach 1:
The patent applies local quality by creating regions with different impurity concentrations and structural characteristics within the crystal growth process, allowing simultaneous optimization of thermal conductivity in certain regions and carrier mobility in others, achieving overall superior performance
Solution Approach 2:
The patent changes physical and chemical parameters during the chemical vapor transport process (temperature profiles, pressure conditions, source material stoichiometry) to decouple the typical inverse relationship between thermal conductivity and carrier mobility, achieving both properties at high levels
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting c-BAs crystals exhibit unprecedented ambipolar mobility and thermal conductivity, making them suitable for next-generation electronic and optoelectronic devices with enhanced performance and integration.
Implementation Method 1
a room temperature thermal conductivity at the one or more locations thereof that is greater than or equal to 1000 Wm−1K−1
Implementation Method 2
an ambipolar mobility, μa, at room temperature, at one or more locations thereof that is greater than or equal to 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2500, 2600, 3000, 4000, 5000, 6000, 7000, 8000, 9000, or 10000 cm2V−1s−1
Data Source
AI summary
Herein provided are cubic boron arsenide (c-BAs) single crystals having an unexpectedly high ambipolar mobility at room temperature, μa, at one or more locations thereof that is greater than or equal to 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2500, 2600, 3000, 4000, 5000, 6000, 7000, 8000, 9000, or 10000 cm2V−1s−1, wherein the ambipolar mobility is defined as: μa=2μeμh/(μe+μh), wherein μe is electron mobility and μh is hole mobility, and having a room temperature thermal conductivity at the one or more locations thereof that is greater than or equal to 1000 Wm−1K−1. Methods of making and using the c-BAs single crystals are also provided.