Cubic GaN Light-Emitting Element Electrode Alignment
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Solution Overview
Problem
Existing display devices face challenges in forming contact electrodes on different layers without incurring additional equipment costs and with limitations in resolution or overlay alignment, which affects the efficiency of light-emitting elements.
Innovation Solution
A display device design featuring first and second electrodes on separate banks with a light-emitting element between them, utilizing cubic gallium nitride (c-GaN) as the active layer, and semiconductor layers doped with Si, along with a method of fabricating the device that includes growing hexagonal and cubic gallium nitride layers on a silicon substrate to improve emission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the first contact electrode and the second contact electrode are formed on different layers, then the alignment and resolution are improved, but the equipment cost increases due to additional element insulating layers
Solution Approach 1:
The patent merges the formation of first and second contact electrodes into a single layer, eliminating the need for separate element insulating layers. This combining approach reduces equipment complexity and manufacturing steps while maintaining acceptable alignment through the single-layer configuration.
2Device complexity
If the first contact electrode and the second contact electrode are formed on the same layer, then the equipment cost is reduced, but the resolution and overlay alignment are limited
Solution Approach 1:
The patent resolves the alignment limitation by transitioning from a planar single-layer approach to a three-dimensional structure where electrodes are positioned at different heights (z-dimension) above the substrate. This vertical separation allows for improved alignment precision while keeping the contact electrode formation process relatively simple.
3Ease of manufacture
If hexagonal gallium nitride is used in the light-emitting element, then the manufacturing process is simpler, but the emission efficiency is lower
Solution Approach 1:
The patent employs a composite material structure combining hexagonal gallium nitride (h-GaN) and cubic gallium nitride (c-GaN) layers. The h-GaN provides a manufacturable substrate while the c-GaN layer enhances emission efficiency, creating a composite structure that achieves both ease of manufacture and high reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the emission efficiency of light-emitting elements by allowing for improved alignment and reduced costs in equipment, while maintaining efficient light emission across different color ranges.
Implementation Method 1
a light-emitting element disposed between the first electrode and the second electrode. The light-emitting element may include an active layer, the active layer may be in a non-polarized state, and the active layer may include cubic gallium nitride (c-GaN)
Implementation Method 2
growing first cubic gallium nitride (c-GaN) on the first hexagonal gallium nitride (h-GaN); and growing second hexagonal gallium nitride (h-GaN) and/or second cubic gallium nitride (c-GaN) on the grown cubic gallium nitride (c-GaN)
Implementation Method 3
The first semiconductor layer may include GaN doped with n-type Si. The first semiconductor layer may include n-type Si doped hexagonal gallium nitride (h-GaN) and cubic gallium nitride (c-GaN). The second semiconductor layer may include GaN doped with p-type Si.
Data Source
AI summary
A display device includes first banks spaced apart from one another and disposed on a substrate; a first electrode and a second electrode, each disposed on one of the first banks to cover each respective first bank and spaced apart from each other; and a light-emitting element disposed between the first electrode and the second electrode. The light-emitting element includes an active layer, the active layer is in a non-polarized state, and the active layer includes cubic gallium nitride (c-GaN).