CuO-InZnO Heterojunction Diode for High-Current Memory Integration
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Solution Overview
Problem
Current semiconductor devices, such as DRAM and resistive random access memory devices, require a switching structure with high current density, low leakage current, and short response time to achieve high integration and efficient information storage, which existing diode structures fail to adequately provide.
Innovation Solution
A diode structure comprising a p-type Cu oxide layer and an n-type InZn oxide layer, with electrodes made of conductive materials, exhibiting excellent rectification properties and rapid response times, is developed, utilizing physical vapor deposition or chemical vapor deposition methods for fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional diode structures are used, then device integration is limited, but achieving high integration requires higher current density which conventional structures cannot provide
Solution Approach 1:
The patent employs a composite structure combining p-type CuO semiconductor layer with n-type InZnO semiconductor layer to form a heterojunction diode. This composite material approach enables superior electrical characteristics including high current density (exceeding 10^4 A/cm²) and low leakage current, thereby achieving high device integration without compromising performance
Solution Approach 2:
The patent optimizes key parameters including layer thicknesses (CuO layer: 50-200 nm, InZnO layer: 50-200 nm), doping concentrations, and deposition conditions to achieve peak current density and rectification ratio. By precisely controlling these parameters, the diode structure achieves maximum integration capability while maintaining excellent electrical properties
2Reliability
If conventional diode structures are used, then leakage current is high, but achieving low leakage current requires improved rectification property which conventional structures fail to provide
Solution Approach 1:
The heterojunction between p-type CuO and n-type InZnO creates an ideal rectification interface that dramatically reduces leakage current. The composite structure leverages the complementary properties of both materials to achieve superior rectification ratios exceeding 10^4, ensuring low leakage current while maintaining simple device architecture
Solution Approach 2:
The patent replaces conventional metal-semiconductor or p-n junction diodes with a semiconductor-semiconductor heterojunction diode. This substitution of the junction type fundamentally improves rectification properties and reduces leakage current through the formation of an ideal heterointerface between mismatched semiconductor materials
3Loss of time
If conventional diode structures are used, then response time is long, but achieving short response time requires rapid switching capability which conventional structures cannot deliver
Solution Approach 1:
The patent optimizes carrier transport parameters including mobility, effective mass, and recombination rates by carefully selecting and doping the CuO and InZnO layers. This parameter optimization enables rapid carrier switching with response times suitable for high-speed memory applications, achieving short response time without increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diode structure achieves a high forward current density and significant forward/reverse current ratio, enabling effective rectification and short response times, suitable for high-integration semiconductor memory devices, including resistive random access memory devices.
Implementation Method 1
A diode structure, including: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide
Implementation Method 2
The p-type Cu oxide layer may include CuO. The n-type InZn oxide layer may include In2Zn2O5
Data Source
AI summary
Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.