Cup-Shaped MIM Capacitor Structure for High Density

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Solution Overview

Problem

As semiconductor devices are miniaturized, the usable area for metal-insulator-metal (MIM) capacitors decreases, leading to a reduction in capacitance density, which affects the functionality of these devices.

Innovation Solution

A capacitor structure is developed with a cup-shaped design that includes a substrate, a dielectric layer, a bottom electrode, a capacitor dielectric layer, and a top electrode, where the top surface of the bottom electrode is lower than the top surface of the top electrode, and vias are used to enhance electrical connections, allowing for increased capacitance area and density without requiring additional manufacturing processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If semiconductor devices are miniaturized, then device size decreases, but capacitance density decreases

Engineering Contradiction:
Improvedevice sizeVSAvoidcapacitance density
Core Design Contradiction:
Volume of moving objectVSQuantity of substance

Solution Approach 1:

The patent transitions from planar capacitor structures to three-dimensional cup-shaped capacitor structures that extend vertically between inter-metal layers. This dimensional change allows capacitance to be accumulated in the vertical direction while maintaining small horizontal footprint, thereby increasing capacitance density despite device miniaturization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The cup-shaped capacitor structure is nested between inter-metal layers within the existing semiconductor device architecture. The bottom electrode, capacitor dielectric layer, and top electrode are nested concentrically to form the cup structure, maximizing capacitance within a compact volume.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Area of moving object

If cup-shaped capacitor structure is implemented, then capacitance area increases, but manufacturing complexity increases

Engineering Contradiction:
Improvecapacitance areaVSAvoidmanufacturing complexity
Core Design Contradiction:
Area of moving objectVSDevice complexity

Solution Approach 1:

The patent merges the capacitor formation process with the existing inter-metal layer fabrication process. The same manufacturing steps used to create inter-metal layers are utilized to form the cup-shaped capacitor structures, eliminating the need for separate capacitor fabrication processes and reducing overall manufacturing complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The cup-shaped capacitor structure serves multiple functions: it provides capacitance for device operation, acts as an inter-metal layer, and can serve as a connection structure. This multi-functionality reduces the need for additional dedicated capacitor structures and simplifies the overall device architecture.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9627468B2Capacitor structure and method of manufacturing the same
Publication Date: 2017.04.18 POWERCHIP SEMICON MFG CORP
  • US9627468B2 patent drawing
  • US9627468B2 patent drawing
  • US9627468B2 patent drawing

AI summary

Provided is a capacitor structure including a substrate, a dielectric layer, a first conductive layer, and a cup-shaped capacitor. The dielectric layer is located on the substrate. The first conductive layer is located in the dielectric layer. The cup-shaped capacitor penetrates through the first conductive layer and is located in the dielectric layer. The cup-shaped capacitor includes a bottom electrode, a capacitor dielectric layer, and a top electrode. Two sidewalls of the bottom electrode are electrically connected to the first conductive layer. The capacitor dielectric layer covers a surface of the bottom electrode. The top electrode covers a surface of the capacitor dielectric layer. The capacitor dielectric layer is located between the top electrode and the bottom electrode. A top surface of the bottom electrode is lower than a top surface of the top electrode. Also the invention provides a method of manufacturing the capacitor structure.