Cuprous Oxide Bonded High-Power Resistor for Heat Dissipation
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Solution Overview
Problem
Conventional high-power resistor fabrication methods face challenges with heat dissipation due to thick glue layers and layer split issues caused by thermal expansion during physical vapor deposition.
Innovation Solution
A fabrication method involving a resistance substrate with a copper metal layer, formation of a cuprous oxide layer, and sintering with a ceramic substrate to create a composite substrate, thereby avoiding the use of thick glue layers and leveraging eutectic diffusion bonding for attachment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a thick glue layer is used to stick the resistance material to the carrier substrate, then the bonding strength is improved, but the heat dissipation function deteriorates
Solution Approach 1:
The invention removes the glue layer entirely from the bonding process. Instead of using a thick adhesive layer between the resistance material and carrier substrate, the patent employs a direct bonding method where the resistance material is firmly attached to the carrier substrate without any intermediate glue layer, thereby eliminating the thermal barrier while maintaining bonding strength
Solution Approach 2:
The invention introduces a transition layer as an intermediary between the resistance material and carrier substrate. This transition layer serves as a bonding interface that provides both mechanical adhesion and thermal conduction pathways, replacing the need for a thick glue layer while maintaining heat dissipation efficiency
2Quantity of substance
If thicker resistance material is deposited on the carrier substrate for low resistance value, then the resistance value is reduced, but layer split occurs due to thermal expansion
Solution Approach 1:
The invention changes the bonding parameters and material properties at the interface between the resistance material and carrier substrate. By modifying the bonding strength and thermal expansion matching at this critical interface, the patent prevents layer split even when thick resistance material is used to achieve low resistance values
Solution Approach 2:
The invention employs a composite structure consisting of the carrier substrate, transition layer, and resistance material. This composite design allows each layer to be optimized for its specific function while working together to prevent thermal expansion-induced layer split, enabling the use of thicker resistance material without compromising structural integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances heat dissipation and prevents layer splits, resulting in a high-power resistor with improved reliability and performance.
Implementation Method 1
forming a cuprous oxide layer on the resistance substrate by using the copper metal layer
Implementation Method 2
performing a first sintering process on the resistance substrate and the ceramic substrate to form a composite substrate
Data Source
AI summary
A high-power resistor and a fabrication method thereof are provided. The method includes: providing a resistance substrate including resistance alloy material and a copper metal layer; forming a cuprous oxide layer on the resistance substrate by using the copper metal layer; sticking the resistance substrate to a ceramic substrate, in which the cuprous oxide layer is located between the resistance substrate and the ceramic substrate; performing a sintering process on the resistance substrate and the ceramic substrate to form a composite substrate; forming a plurality of terminal electrodes on the composite substrate to form the high-power resistor. Therefore, the high-power resistor includes the composite substrate and the terminal electrodes. The composite substrate includes a bonding layer disposed between the ceramic substrate and the resistance substrate to bond the resistance alloy material on the ceramic substrate, in which the bonding layer includes sintered cuprous oxide.