Curcumin-Derivative Resist Underlayer Composition for Wet Etch Removal

The patent applies parameter changes by modifying the chemical composition parameters of the resist underlayer film through the use of curcumin derivatives with specific molecular structures (Formula 1). These structural parameters enable the film to exhibit dual characteristics: high resistance to organic solvents and alkaline developers during lithography, while simultaneously maintaining high solubility in wet etching chemical liquids for easy removal. This resolves the contradiction by changing the chemical composition parameters to achieve both durability during processing and ease of removal afterward.

The patent applies mechanics substitution by replacing the mechanical/physical dry etching process with a chemical wet etching process. The curcumin derivative-based resist underlayer film is specifically designed to be highly soluble in wet etching chemical liquids, allowing complete removal through chemical dissolution rather than physical sputtering. This substitution simplifies the manufacturing process while achieving complete film removal, thereby reducing both process complexity and cost.

The patent applies local quality by designing the resist underlayer film with spatially differentiated chemical properties. The curcumin derivative structure provides high solubility in wet etching chemical liquids at the film level, while the film itself acts as a protective layer during lithography. This localized chemical property enhancement ensures that the wet etching process selectively removes only the resist underlayer film without damaging the underlying substrate, achieving both process simplification and substrate protection.