Current Mirror Feedback for Precise Matching Under MOSFET Leakage
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Solution Overview
Problem
Current mirrors in deep sub-micron technology are sensitive to variations in temperature and voltage supply due to MOSFET gate leakage currents, affecting the performance and functionality of integrated circuits.
Innovation Solution
The implementation of feedback circuits with active components, including amplifiers and low-pass filters, to compensate for MOSFET gate leakage currents and stabilize the output bias current, using multiple current sources and transimpedance amplifiers to achieve precise current matching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If MOSFET gate leakage currents are present in deep sub-micron technology, then current mirror precision deteriorates, but device scaling continues to improve integration density
Solution Approach 1:
The patent implements feedback circuits that sense the output current and adjust the input current accordingly to compensate for gate leakage effects. The feedback mechanism continuously monitors and corrects the current mirror output, maintaining precision despite leakage currents in deep sub-micron MOSFETs.
Solution Approach 2:
The patent introduces intermediary compensation circuits and additional MOSFET devices that act as mediators to counterbalance the harmful gate leakage currents. These intermediary elements provide corrective current paths that offset the leakage effects without requiring fundamental changes to the core current mirror structure.
2Manufacturing precision
If gate leakage currents are compensated using traditional methods, then current matching improves, but circuit complexity increases
Solution Approach 1:
The patent divides the current mirror into multiple segmented sections with individual compensation mechanisms. By segmenting the circuit, each portion can be optimized independently, and the overall complexity is managed through modular design rather than a single complex compensation circuit.
Solution Approach 2:
The patent employs parameter changes in the MOSFET devices, such as adjusting width-to-length ratios and threshold voltages, to inherently reduce gate leakage effects. By optimizing device parameters during design, the need for complex additional compensation circuits is reduced.
Data Source
AI summary
Aspects of a method and system for precise current matching in deep sub-micron technology may include adjusting a current mirror to compensate for MOSFET gate leakage currents by using feedback circuits. The feedback circuits may be implemented from active components to create active feedback circuits. If the reference current to be mirrored is noisy, a smoothing effect may be achieved by introducing a low-pass filter coupled to the current mirror design. The active feedback may comprise amplifiers, which may comprise one or more amplifier stages. The amplifier may amplify either a bias voltage error or a bias current error. Furthermore, a transimpedance amplifier may be utilized in the feedback loop. The output bias current of the current mirror may be stabilized dynamically during adjusting. Multiple current sources may be utilized in the current mirrors.