Current-Distributing Pin Structure for IC Electromigration Mitigation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As integrated circuits (ICs) miniaturize, the risk of electromigration (EM) increases due to higher current densities, leading to potential conductor breaks and short circuits, which existing technologies struggle to mitigate effectively.
Innovation Solution
Implementing a semiconductor device with a metallization layer that includes multiple access points, distributing current through multiple vias to reduce root mean square (RMS) current per access point, thereby lowering current density and preventing EM degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conductor size is decreased to enable IC miniaturization, then device size is reduced, but current density increases leading to higher EM risk
Solution Approach 1:
The input pin is divided into multiple access points (first access point, second access point, etc.) instead of using a single access point. This segmentation distributes the current flow across multiple paths, reducing the current density at each individual access point and mitigating electromigration effects while maintaining the miniaturized device structure.
2Reliability
If current is distributed through multiple access points, then current density is reduced, but device complexity increases
Solution Approach 1:
Multiple access points are merged into a single input pin structure that connects to one conductive structure in the first metallization layer. This combining approach distributes current through multiple access points while maintaining a unified pin structure, avoiding the need for separate pins and reducing overall device complexity.
3Reliability
If multiple access points are implemented, then RMS current per access point is reduced, but manufacturing complexity increases
Solution Approach 1:
The input pin structure serves multiple functions: it provides electrical connection through multiple access points for current distribution, maintains compatibility with standard via formation processes, and integrates with existing metallization layers. This multi-functionality allows the structure to achieve EM mitigation while using conventional manufacturing techniques.
Data Source
AI summary
A method of manufacturing an integrated circuit (IC) includes generating first and second active region shapes extending in a first direction, the second active region shape separated from the first active region shape in a second direction. The method includes generating first and second sets of gate structure shapes extending in the second direction and overlapping the first and second active region shapes. The method includes generating a first conductive shape and a second conductive shape extending in the first direction, the first conductive shape overlapping the first active region shape, and the second conductive shape overlapping the second active region shape. The method includes generating a third conductive shape, the third conductive shape extending in the second direction and overlapping the first conductive shape and the second conductive shape. The method includes generating a fourth conductive shape extending in the first direction and overlapping the third conductive shape.