On-Chip Current Sensor Isolation for Transient Voltage Robustness
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Solution Overview
Problem
Conventional current sensing structures in semiconductor devices are not suitable for withstanding adverse operating conditions such as transient voltage events, leading to potential damage and reduced reliability.
Innovation Solution
The semiconductor device incorporates a transition region with a conductive segment on the gate contact and an isolation region under the gate contact to reduce resistivity and prevent current propagation between the device and sensor regions, enhancing the device's ability to detect events like short circuits within microseconds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate source contact is provided for current sensing in conventional semiconductor devices, then current monitoring capability is achieved, but the device cannot withstand transient voltage events and adverse operating conditions
Solution Approach 1:
The semiconductor device is divided into distinct regions: a device region for power switching, a sensor region for current sensing, and a transition region connecting them. This segmentation allows each region to be optimized for its specific function while protecting against transient voltage events through the isolated well structures in the transition region.
Solution Approach 2:
The transition region acts as an intermediary between the device region and sensor region. It contains isolated well regions that mediate the electrical connection while providing protection against transient voltage propagation, enabling reliable current sensing without exposing the sensor to adverse conditions.
2Measurement precision
If the gate contact material is used as-is, then manufacturing is simple, but resistivity is high which affects signal integrity and sensing accuracy
Solution Approach 1:
The gate contact is formed using composite material structures with a conductive segment (such as metal) deposited on the gate contact material. This composite structure reduces overall resistivity and improves signal integrity while maintaining compatibility with standard semiconductor manufacturing processes.
3Measurement precision
If current sensing is implemented without isolation structures, then device complexity is low, but current can propagate from device region to sensor region causing false readings
Solution Approach 1:
The device is segmented into electrically isolated regions using isolated well structures in the transition region. These segments prevent current propagation from the device region to the sensor region while allowing controlled signal transmission for accurate current measurement.
Solution Approach 2:
The isolated well regions in the transition region serve as intermediaries that block harmful current propagation while permitting controlled signal flow. This mediation ensures measurement accuracy without requiring complete physical separation of the device and sensor regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the semiconductor device's robustness against transient voltage events, allowing it to detect short circuits quickly and maintain accurate current sensing ratios during switching operations.
Implementation Method 1
A conductive segment may be formed on the gate contact in the transition region to reduce resistivity of the material used to form the gate contact
Implementation Method 2
The isolation region isolates the first isolated well region from the second isolated well region to prevent current in the device region from propagating into the sensor region
Data Source
AI summary
A semiconductor device includes a device region and an on-chip sensor region, such as an on-chip current sensor region. The semiconductor device further includes a transition region formed between the device region and the sensor region. A gate contact extends across the transition region. A conductive segment may be formed on the gate contact in the transition region to reduce a resistivity of the material used to form the gate contact. Additionally or alternatively, an isolation region may be formed under the gate contact between a first isolated well region in the device region and a second isolated well region in the sensor region. The isolation region isolates the first isolated well region from the second isolated well region to prevent current in the device region from propagating into the sensor region.