Curved Beam Transistor for Channel Mobility Scaling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor technologies face challenges in scaling down devices while maintaining channel mobility, particularly for RF FET switches, where strained films used to improve mobility do not scale well to smaller technology nodes and can degrade device performance.
Innovation Solution
A curved beam structure made from stressed materials is introduced, which forms a cavity beneath the semiconductor device, imparting stress through curvature to enhance or decrease carrier mobility, thereby improving transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If strained films are used to increase channel mobility, then carrier mobility is improved, but the film thickness becomes too thick (65 nm) and does not scale well to smaller technology nodes
Solution Approach 1:
The patent applies curvature to the beam structure to generate stress in the semiconductor channel. By forming the beam with a curved profile rather than a flat structure, tensile or compressive stress is induced in the channel region, which enhances carrier mobility without requiring thick strained films. The curvature radius and profile can be optimized to achieve the desired stress level while maintaining compatibility with scaled technology nodes.
Solution Approach 2:
The patent changes the stress state parameter in the semiconductor channel by introducing a curved beam structure. Instead of relying on thick strained films to provide stress, the curvature of the beam structure itself generates the necessary tensile or compressive stress in the channel, allowing mobility enhancement while using much thinner film structures that scale to smaller technology nodes.
2Productivity
If device scaling is pursued to improve speed and reduce power consumption, then device performance is improved, but channel mobility degradation occurs
Solution Approach 1:
The curved beam structure generates stress in the semiconductor channel that compensates for mobility degradation caused by scaling. As devices are scaled down, the curvature-induced stress maintains or enhances carrier mobility, allowing continued improvement in device speed and power consumption without sacrificing channel mobility.
Solution Approach 2:
The patent changes the stress parameter in the channel to counteract the mobility degradation that occurs with device scaling. By adjusting the beam curvature and stress state, the channel mobility can be maintained or enhanced even as device dimensions are reduced, enabling continued scaling benefits.
3Reliability
If strained films are used to improve RF FET switch performance, then mobility is increased, but the thick film structure (65 nm) does not scale to tighter ground rules
Solution Approach 1:
The curved beam structure provides a scalable alternative to thick strained films for improving RF FET performance. The curvature-induced stress mechanism does not depend on thick film structures, allowing the same mobility enhancement to be achieved in scaled devices with tighter ground rules. The beam curvature can be adjusted to provide appropriate stress levels for different technology nodes.
Solution Approach 2:
The patent changes from a thickness-based stress mechanism to a curvature-based stress mechanism. This parameter change enables scalability because the curvature radius and profile can be scaled proportionally with device dimensions, maintaining the stress-induced mobility enhancement across different technology nodes without being constrained by minimum film thickness requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The curved beam structure increases carrier mobility by up to 20% by applying tensile or compressive stress, effectively addressing the limitations of existing scaling methods and improving device performance without the thickness issues of traditional strained films.
Implementation Method 1
at least one semiconductor device on a top portion or a bottom portion of the curved beam structure whose carrier mobility is increased or decreased by a curvature of the curved beam structure
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to transistors with improved channel mobility and methods of manufacture. A structure includes: a curved beam structure formed from at least one stressed material; a cavity below the curved beam structure; and at least one semiconductor device on a top portion or a bottom portion of the curved beam structure whose carrier mobility is increased or decreased by a curvature of the curved beam structure.