Curved-Cavity Acoustic Resonator for Yield and Reproducibility

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Solution Overview

Problem

Conventional acoustic resonators face challenges in achieving higher performance and simplified manufacturing processes, leading to lower production yield and reproducibility.

Innovation Solution

A resonator design featuring a substrate with a multilayer structure including a lower electrode, piezoelectric layer, and upper electrode, where a cavity is formed between the substrate and the multilayer structure, with a smooth curved surface for transition, optimizing the resonator's performance and manufacturing ease.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional acoustic resonator structures are used, then manufacturing processes become complex, but production yield and reproducibility are lower

Engineering Contradiction:
Improveproduction yieldVSAvoidmanufacturing process complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent introduces a curved surface structure at the interface between the piezoelectric layer and the lower electrode, replacing conventional flat interfaces. This curved surface design simplifies the manufacturing process by enabling more straightforward deposition and alignment operations, while simultaneously improving production yield and reproducibility through enhanced acoustic wave confinement and reduced manufacturing variability.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

The patent modifies the geometric parameters of the resonator structure, specifically introducing a curved surface with controlled radius of curvature in the piezoelectric layer interface. This parameter change optimizes the acoustic field distribution and simplifies the manufacturing process, leading to improved production yield and consistency across batches.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If conventional resonator structures are used, then manufacturing processes are complex, but performance is limited

Engineering Contradiction:
Improveresonator performanceVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The curved surface interface in the piezoelectric layer improves resonator performance by enhancing acoustic wave confinement and reducing energy loss. The curvature geometry optimizes the stress distribution and acoustic impedance matching, leading to higher quality factors and improved device reliability without requiring additional complex structural elements.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

The patent employs a composite multilayer structure combining piezoelectric materials with specific curved interface geometry and metal electrodes. This composite design leverages the complementary properties of different materials and the curved interface to achieve superior acoustic performance and device reliability.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The novel resonator structure enhances performance and simplifies the manufacturing process, resulting in higher production yield and reproducibility compared to conventional designs.

Implementation Method 1

an acoustic wave that is vertically propagated may be generated between the upper and lower electrodes in the effective region, due to an inverse piezoelectric effect of the piezoelectric material

Methodology Applied
Scientific EffectInverse piezoelectric effect: Piezoelectric Effect

Implementation Method 2

The acoustic wave is reflected to and fro between an interface of the upper electrode and the air and the acoustic reflection structure under the lower electrode and resonates at a certain frequency

Methodology Applied
Scientific EffectAcoustic reflection: Reflection

Data Source

PatentUS11664783B2Resonator and semiconductor device
Publication Date: 2023.05.30 THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
  • US11664783B2 patent drawing
  • US11664783B2 patent drawing
  • US11664783B2 patent drawing

AI summary

The application discloses a resonator and a semiconductor device. The resonator includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure successively includes a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top. A cavity is formed between the substrate and the multilayer structure. The cavity is delimited by an upper surface of the substrate and a lower surface of the multilayer structure. A middle region of a part, corresponding to the cavity, of the lower surface of the multilayer structure is a plane. A smooth curved surface for smooth transition is between an edge of the middle region and an edge of the cavity, and the smooth curved surface is between the upper surface of the substrate and the plane.