Curved Metallic Cover for Warpage-Matched Semiconductor Cooling
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Solution Overview
Problem
The integration of multiple semiconductor devices in miniaturized electronic systems poses challenges due to the need for advanced packaging and assembling techniques that enhance electrical performance and reduce transmission and insertion losses, while existing methods struggle with warpage and thermal management in semiconductor devices.
Innovation Solution
A semiconductor device manufacturing method involving a circuit substrate with build-up layers, semiconductor packages bonded to the substrate, and a metallic cover with a curved cap and flanges that matches the warpage profile of the substrate and packages, enhancing thermal interface material contact and mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a flat metallic cover is used, then manufacturing is simple, but thermal contact is poor due to warpage
Solution Approach 1:
The metallic cover is designed with a curved bottom surface that matches the warpage profile of the semiconductor package and circuit substrate. This curvature enables conformal contact across the entire assembly, ensuring optimal thermal interface material contact and heat dissipation performance while accommodating the natural warpage deformation.
Solution Approach 2:
The metallic cover features a non-uniform thickness distribution, with varying thickness in different regions to compensate for local warpage variations. This localized thickness adjustment ensures uniform contact pressure and thermal contact across the entire semiconductor package surface, addressing specific contact gaps created by warpage.
2Temperature
If a curved metallic cover is used to match warpage, then thermal contact improves, but manufacturing complexity increases
Solution Approach 1:
The warpage profile of the semiconductor package and circuit substrate is measured or predicted in advance during the design phase. The metallic cover is then pre-formed with a complementary curved surface that matches this anticipated warpage, ensuring optimal contact is achieved automatically when the components are assembled without requiring additional post-assembly adjustments.
Solution Approach 2:
The manufacturing process of the metallic cover incorporates parameters such as controlled thickness variation and surface curvature that are optimized to match the warpage characteristics. By adjusting these geometric parameters during manufacturing, the cover achieves conformal contact while using standard fabrication processes.
3Strength
If uniform thickness is used in metallic cover, then manufacturing is easier, but contact pressure is non-uniform due to warpage
Solution Approach 1:
The metallic cover features a non-uniform thickness distribution, with varying thickness in different regions to compensate for local warpage variations. This localized thickness adjustment ensures uniform contact pressure and thermal contact across the entire semiconductor package surface, addressing specific contact gaps created by warpage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution improves thermal performance and mechanical stability by ensuring conformal contact between the metallic cover and thermal interface materials, reducing thermal resistance and maintaining mechanical integrity despite warpage, thus supporting increased power usage without compromising reliability.
Implementation Method 1
a thermal interface material disposed between the metallic cover and the semiconductor package
Data Source
AI summary
A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.