Curved Metallic Cover for Warpage-Matched Semiconductor Packaging
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Solution Overview
Problem
The integration of multiple semiconductor devices in miniaturized electronic systems poses challenges due to the need for advanced packaging and assembling techniques that enhance electrical performance and reduce transmission and insertion losses, while existing methods struggle with thermal and mechanical stability.
Innovation Solution
The use of a semiconductor device structure that includes a circuit substrate with build-up layers, semiconductor packages interconnected via micro-bumps and TSVs, and a metallic cover with a curved cap to match the warpage profile, enhancing thermal performance and mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor devices are miniaturized to increase integration density, then device size is reduced, but thermal management becomes more difficult and electrical performance deteriorates due to increased transmission and insertion losses
Solution Approach 1:
The patent transitions from planar 2D packaging to three-dimensional stacked packaging architecture. Multiple semiconductor dies are vertically stacked and interconnected through TSVs, enabling higher integration density without increasing the device footprint. This dimensional transition allows signal paths to be shortened within each die while maintaining compact overall size, thereby reducing transmission and insertion losses despite miniaturization.
Solution Approach 2:
The patent implements nested packaging by placing one semiconductor die inside or adjacent to another in a stacked configuration. The lower die serves as a base for the upper die, with interconnections formed through vertical vias. This nesting approach maximizes the use of vertical space, achieving high integration density in a miniaturized form factor while maintaining electrical performance through optimized signal paths.
2Productivity
If advanced packaging techniques are used to integrate multiple semiconductor devices, then integration density is improved, but thermal and mechanical stability deteriorates
Solution Approach 1:
The patent employs underfill material with specifically engineered thermal and mechanical properties to compensate for CTE mismatches between different die materials. The underfill's thermal conductivity and elastic modulus are optimized to facilitate heat dissipation from upper dies to the substrate while providing mechanical support. This parameter optimization enables high integration density through stacked packaging while maintaining thermal and mechanical stability.
Solution Approach 2:
The patent uses composite underfill structures combining materials with different thermal and mechanical properties. The underfill layer acts as a composite material that bridges the thermal and mechanical properties of the silicon dies and the organic substrate, creating a graded transition that reduces stress concentration and improves overall package stability despite high integration density.
3Volume of moving object
If multiple semiconductor devices are integrated in a compact form, then device miniaturization is achieved, but reliability decreases due to increased stress and thermal issues
Solution Approach 1:
The patent introduces underfill material as an intermediary substance between the stacked dies and the substrate. This underfill layer acts as a stress-distributing medium that reduces the impact of CTE mismatches and mechanical stresses generated during thermal cycling. By placing this intermediary layer, the patent maintains compact device volume while significantly improving reliability through stress mitigation and enhanced thermal management.
Solution Approach 2:
The underfill material provides beforehand cushioning by pre-compen sating for thermal expansion differences and mechanical stresses before they occur during device operation. The material's viscoelastic properties allow it to absorb and distribute stresses that would otherwise concentrate at die-substrate interfaces, thereby preventing reliability issues such as delamination or crack formation in miniaturized stacked packages.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves thermal performance by increasing contact area and reducing thermal resistance, while maintaining mechanical stability and reliability, enabling higher power usage without compromising performance.
Implementation Method 1
a thermal interface material disposed on the semiconductor package between the circuit substrate and the metallic cap
Data Source
AI summary
A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.