Curved Field Plate Structure for III-V Semiconductor Breakdown Control
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Solution Overview
Problem
Current semiconductor devices with III-V compound semiconductor layers face challenges in enhancing electrical performance, particularly in high power and high frequency applications, due to limitations in electric field distribution and carrier mobility.
Innovation Solution
Incorporating a field plate with a curved sidewall between the gate and drain structures in the semiconductor device to improve electric field distribution, which includes forming a III-V compound semiconductor layer on a substrate and patterning a field plate with a first curved sidewall adjacent to the drain structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional field plate with straight sidewalls is used, then the device structure is simple and easy to manufacture, but the electric field distribution is poor leading to corona effect and current collapse
Solution Approach 1:
The field plate sidewalls are designed with curved profiles instead of straight edges. The curvature radius varies along the sidewall height, creating a smooth transition that redistributes the electric field. This curved geometry eliminates field concentration at sharp corners, preventing corona discharge and current collapse while maintaining device reliability.
Solution Approach 2:
The curvature radius of the field plate sidewall is not uniform but varies locally along the height. Different sections have different curvature radii to optimize electric field distribution at specific locations. This local variation allows precise control of field strength where needed without unnecessarily complicating the overall structure.
2Reliability
If the field plate sidewall curvature radius is increased, then the electric field distribution improves, but the manufacturing precision requirements increase
Solution Approach 1:
The curvature radius of the field plate sidewall is optimized to specific parameter ranges. By controlling the curvature radius within defined limits (not too small to cause field concentration, not too large to complicate manufacturing), the patent achieves improved breakdown voltage while maintaining manufacturability. The specific parameter values balance performance and fabrication feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The curved sidewall field plate enhances electric field distribution, addresses issues like corona effect, and improves the semiconductor device's electrical performance and reliability by increasing breakdown voltage and suppressing current collapse.
Implementation Method 1
A field plate including a curved sidewall is used to improve electric field distribution in the semiconductor device
Implementation Method 2
Two-dimensional electron gas (2DEG) may be generated by the piezoelectricity property of the GaN-based materials
Data Source
AI summary
A semiconductor device includes a substrate, a III-V compound semiconductor layer, a gate structure, a drain structure, and a field plate. The III-V compound semiconductor layer is disposed on the substrate. The gate structure, the drain structure, and the field plate are disposed above the III-V compound semiconductor layer. The field plate is located between the gate structure and the drain structure. The field plate includes a first curved sidewall located at an edge of the field plate adjacent to the drain structure. The first curved sidewall of the field plate may be used to improve electric field distribution in the semiconductor device, and electrical performance of the semiconductor device may be enhanced accordingly.