Curved FinFET Channel Structure for High-Voltage Breakdown Control
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Solution Overview
Problem
Existing FinFET devices face challenges in being designed as high-voltage transistors due to the need for controlling breakdown voltage and resistance on the channel, which is not adequately addressed in current manufacturing methods.
Innovation Solution
The design and manufacturing method involve creating channels with specific shapes such as U, Ω, M, ring, and finger shapes that are longer and less covered by the gate electrode, increasing channel resistance to sustain high voltage without breakdown, and using multiple gate electrodes to adjust resistance for optimal efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the channel length is increased to sustain high voltage without breakdown, then the breakdown voltage is improved, but the channel resistance increases excessively
Solution Approach 1:
The channel is divided into multiple segments with different doping concentrations along its length. The first portion has a first doping concentration while the second portion has a second doping concentration, creating segmented regions that independently control resistance and breakdown characteristics
Solution Approach 2:
Different portions of the channel are assigned different doping concentrations to achieve local optimization. The first portion near the source has higher doping for lower resistance, while the second portion near the drain has lower doping for higher breakdown voltage
2Reliability
If the gate electrode coverage is reduced to increase channel resistance for high voltage operation, then the breakdown voltage is improved, but the gate control over the channel is weakened
Solution Approach 1:
The gate electrode is designed with varying coverage along the channel length, providing enhanced control in critical regions while allowing higher resistance in other regions. This local differentiation maintains gate authority where needed while enabling high voltage operation elsewhere
Solution Approach 2:
The gate electrode structure is segmented to provide different levels of coverage over different channel portions, allowing independent optimization of control and breakdown characteristics in each segment
3Manufacturing precision
If multiple gate electrodes are added to adjust resistance for optimal efficiency, then the resistance control is improved, but the device complexity increases
Solution Approach 1:
Multiple gate electrodes are introduced to divide the channel control into distinct segments, allowing independent resistance adjustment in different regions to achieve optimal overall performance
Data Source
AI summary
A transistor and a manufacturing method are provided. The transistor includes at least one gate electrode, a channel, a gate dielectric layer, a source and a drain. The channel is curved. A doping concentration of a first portion of the channel is different from a doping concentration of a second portion of the channel. The gate dielectric layer is disposed between the gate electrode and the channel. The source is connected to the channel. The drain is connected to the channel.