Curved Semiconductor Die Manufacturing via Iterative Slit Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for manufacturing curved semiconductor dies, such as stitching flat FPAs or using patterned silicon, face challenges like misalignment, reduced active sensing area, and complex readout methods, which hinder the production of high-degree curved imaging detectors suitable for infrared imaging while maintaining simplicity and cost-effectiveness.
Innovation Solution
A method involving finite element analysis to iteratively modify slit patterns on semiconductor dies, allowing for the formation of microfabrication masks and pneumatic curving to achieve partial spherical curvature with minimal gap and stress, enabling a high-degree curvature suitable for row/column readout methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If flat FPAs are stitched together on a curved die, then curved imaging detectors can be formed, but misalignment occurs and manufacturing precision deteriorates
Solution Approach 1:
The patent divides the curved FPA into multiple discrete petals that can be independently manufactured and then assembled. Each petal is a separate segment that can be precisely controlled during manufacturing, avoiding the alignment issues that would occur if trying to stitch continuous flat FPAs together. The segmentation allows each petal to be optimized independently while maintaining overall curved geometry.
Solution Approach 2:
The patent performs preliminary curving of individual petals before final assembly into the complete FPA. This preliminary action ensures that each petal is pre-shaped to the correct curvature, making the final assembly process simpler and more precise. The petals are curvinged in advance with proper alignment features built in, eliminating the need for complex real-time alignment during assembly.
2Shape
If petals are used to form curved FPA, then curved shape is achieved, but large disconnected areas reduce active sensing area
Solution Approach 1:
The patent applies local quality by making the gaps between petals non-uniform. The gaps are smaller in regions where active sensing is needed and larger in regions where sensing is not required. This allows the curved petal structure to be maintained while minimizing the loss of active sensing area. The local variation in gap size optimizes the balance between structural integrity and sensing coverage.
3Adaptability or versatility
If patterned silicon approach is used, then pixels can move independently to facilitate curving, but reduced active sensing area occurs due to large etched area
Solution Approach 1:
The patent uses thin film structures for the petals that provide flexibility for curving while maintaining structural integrity. These thin films allow the petals to bend and conform to the curved geometry without requiring large etched areas. The flexible thin film design enables independent movement and curving capability while preserving maximum active sensing area, avoiding the problem of large etched regions reducing the sensing surface.
4Manufacturing precision
If iterative finite element analysis is performed to optimize slit pattern, then manufacturing precision improves, but manufacturing time increases
Solution Approach 1:
The patent performs preliminary finite element analysis during the design phase to optimize the slit pattern before manufacturing. This preliminary action identifies the optimal slit configuration that will achieve the desired curvature with minimal gaps. By completing the optimization analysis before production, the patent avoids iterative adjustments during manufacturing, thereby reducing overall manufacturing time while maintaining high precision.
Solution Approach 2:
The patent uses finite element analysis simulations to create virtual models and test different slit patterns before actual manufacturing. These digital copies allow for rapid iteration and optimization without physical prototypes. Once the optimal pattern is identified through simulation, it is directly transferred to manufacturing, eliminating the need for time-consuming physical trial and error while ensuring high curvature accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs and time by ensuring accurate curvature with minimal loss in active sensing area, facilitating the production of high-performance curved semiconductor dies for imaging sensors.
Implementation Method 1
pneumatic curving to achieve partial spherical curvature
Data Source
AI summary
A method of manufacturing a curved semiconductor die includes: designing a semiconductor die design by conducting finite element analysis of an initial semiconductor die design having a partial spherical curvature, the initial semiconductor die design including a shape of a semiconductor die and a location and shape of a slit in the semiconductor die; when a size of a gap at the slit in the curved semiconductor die is outside a tolerance, modifying the initial semiconductor die design to provide a revised semiconductor die design and conducting another finite element analysis thereof; when the size of the gap at the slit in the curved semiconductor die is within the tolerance, manufacturing a microfabrication mask utilizing the initial semiconductor die design or the revised semiconductor die design having the size of the gap within the tolerance; forming a semiconductor die by utilizing the microfabrication mask; and curving the semiconductor die.