Curved Sputter Deposition Apparatus for Uniform Target Utilization
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Solution Overview
Problem
Sputter deposition techniques using magnetrons result in non-uniform target material distribution and erosion profiles, limiting the utilization of target material and affecting the uniformity of the deposited layer.
Innovation Solution
A sputter deposition apparatus with a substrate guide on a curved path and a confining magnetic field that follows the curve, combined with electrical biasing of the target material, to achieve uniform plasma confinement and controlled deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a magnetron is used to increase plasma density and deposition rate, then the deposition efficiency is improved, but the target material erosion becomes non-uniform (circular racetrack profile) limiting target utilization
Solution Approach 1:
The substrate is guided along a curved path that follows the magnetic field lines, transforming the linear deposition geometry into a curved one. This curvature allows the plasma to be confined uniformly around the entire substrate surface, enabling consistent deposition across the whole target area rather than just a circular racetrack region, thereby improving target material utilization while maintaining high deposition rates
2Productivity
If a magnetron is used to increase plasma density, then the deposition rate is improved, but the uniformity of deposited material is reduced due to circular erosion profile
Solution Approach 1:
The curved substrate path and corresponding curved magnetic field configuration ensure that plasma density is uniformly distributed around the entire substrate circumference. This eliminates the non-uniform deposition associated with linear magnetron configurations, achieving both high deposition rates and uniform material distribution across the substrate surface
Solution Approach 2:
The curved magnetic field configuration serves multiple functions simultaneously: it confines plasma uniformly across the substrate surface, follows the substrate geometry, and enables complete target utilization. This multi-functional approach resolves the contradiction between deposition rate and uniformity by integrating plasma confinement with the curved substrate path
3Device complexity
If batch processing is used for deposition, then equipment simplicity is maintained, but productivity is reduced due to cessation between batches
Solution Approach 1:
The curved substrate path enables continuous reel-to-reel processing where substrates are fed through the deposition zone continuously without interruption. This eliminates the batch processing interruptions while maintaining relatively simple equipment architecture, thereby improving productivity without significantly increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient, uniform sputter deposition over large surface areas, improving the consistency of the deposited material and allowing for patterned deposition without the need for masks, while also controlling the crystallinity of the target material.
Implementation Method 1
a confining arrangement comprising one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the substrate
Implementation Method 2
biasing means for applying electrical bias to the target material; Applying electrical bias to the target material results in ions from the plasma in the vicinity of the target material to be attracted to a region adjacent to the target material
Implementation Method 3
a substrate guide arranged to guide a substrate along a curved path
Implementation Method 4
Bombardment of the target by ions of the plasma eject target material which may then deposit on the substrate surface
Data Source
AI summary
Apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate guide arranged to guide a substrate along a curved path and a target portion spaced from the substrate guide and arranged to support target material. The target portion and the substrate guide define between them a deposition zone. The apparatus includes biasing element for applying electrical bias to the target material. The apparatus also includes a confining arrangement including one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use. The confining magnetic field having magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path.