Curved Surface Semiconductor Light-Emitting Device

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Solution Overview

Problem

Existing semiconductor light-emitting devices face challenges in achieving high light emission efficiency and light density due to internal light reflection and decay, which limits their ability to emit light effectively.

Innovation Solution

A semiconductor light-emitting device with a laminated structure featuring a first and second cladding layer and an active layer, where the outer peripheral surface is shaped as a curved surface protruding outward with an inclination angle ranging from 45° to 55°, increasing the likelihood of total reflection and enhancing light emission efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If the end face of the active layer is inclined to set the light emitting direction, then the light emission efficiency is improved, but the structural complexity increases

Engineering Contradiction:
Improvelight emission efficiencyVSAvoidstructural complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent applies curvature by forming the peripheral surface of the LED chip as a curved surface that is concave in the laminated direction, rather than using traditional inclined planes. This curved structure guides light through total internal reflection while maintaining a more symmetric and manufacturable form, resolving the contradiction between improving light emission efficiency and reducing structural complexity.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Loss of energy

If light is reflected multiple times within the light-emitting diode to improve emission efficiency, then the light emission efficiency increases, but the light density decreases due to decay

Engineering Contradiction:
Improvelight emission efficiencyVSAvoidlight density
Core Design Contradiction:
Loss of energyVSUse of energy by moving object

Solution Approach 1:

The patent applies local quality by creating different surface characteristics in different regions. The curved peripheral surface is designed with specific curvature radius to achieve total internal reflection, while the light emitting face maintains high light density by minimizing reflection paths. This localized optimization allows efficient light extraction without excessive decay.

Inventive Principle:
Principle #3Local quality

3Loss of energy

If the peripheral surface is formed as a curved surface protrusively curved outward, then the total reflection probability increases and light emission efficiency improves, but the manufacturing precision requirements increase

Engineering Contradiction:
Improvelight emission efficiencyVSAvoidcurved surface precision
Core Design Contradiction:
Loss of energyVSManufacturing precision

Solution Approach 1:

The patent specifies a curvature radius of 1-10 μm for the peripheral surface, providing a quantifiable parameter range that balances optical performance with manufacturing feasibility. This parameter specification transforms the abstract concept of 'curved surface' into a manufacturable feature with clear tolerances, resolving the contradiction between improved light emission efficiency and manufacturing precision requirements.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The curved surface design enhances light emission efficiency by increasing the probability of total reflection, resulting in higher light density and improved luminous efficiency compared to traditional designs.

Implementation Method 1

a probability that light directly propagated to this peripheral surface from the active layer through the laminated semiconductor structure portion and light reached this peripheral surface after being reflected on the major surface opposite to the light emitting surface, for example, will be reflected on this curved surface in a total reflection fashion can be increased

Methodology Applied
Scientific EffectTotal reflection: Total Internal Reflection

Implementation Method 2

the electrode being formed of a metal electrode having high reflectance relative to light from the semiconductor light-emitting portion

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS7468528B2Semiconductor light-emitting device
Publication Date: 2008.12.23 SONY GROUP CORP
  • US7468528B2 patent drawing
  • US7468528B2 patent drawing
  • US7468528B2 patent drawing

AI summary

A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.