Curvilinear OPC Control Point Shifting for Edge Placement Error

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Solution Overview

Problem

Existing optical proximity correction (OPC) methods struggle to minimize edge placement errors (EPE) effectively, especially at corner portions of patterns in semiconductor manufacturing.

Innovation Solution

The proposed OPC method involves generating a retarget curve line for a polygonal pattern layout, shifting control points along this curve to minimize EPE, and iteratively refining the curvilinear pattern layout through simulation and adjustment until the desired edge placement accuracy is achieved.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional OPC methods are used to correct patterns, then manufacturing precision is improved, but edge placement error at corner portions cannot be sufficiently minimized

Engineering Contradiction:
Improveedge placement accuracyVSAvoidcorner portion accuracy
Core Design Contradiction:
Manufacturing precisionVSMeasurement precision

Solution Approach 1:

The patent divides the pattern correction process into multiple stages: initial control points are generated on the retarget curve line, then iteratively adjusted by shifting along the curve. The corner portions are specifically targeted through segmentation of the control points into multiple groups, with each group independently optimized. This segmentation enables precise control of corner regions while maintaining overall pattern accuracy.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a new dimension of control by allowing control points to shift not only in the normal direction but also along the retarget curve line. This additional degree of freedom enables optimization of corner portions where traditional normal-direction adjustment is insufficient. The control points can move in multiple directions (along the curve and perpendicular to it), providing enhanced flexibility for correcting complex corner geometries.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If control points are shifted along the retarget curve line to minimize EPE, then manufacturing precision is improved, but computational complexity increases

Engineering Contradiction:
Improveedge placement accuracyVSAvoidOPC process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent performs preliminary actions by pre-calculating the retarget curve line and initial control points before the iterative optimization process. The retarget curve line is generated based on the desired pattern geometry, and initial control points are positioned on this pre-computed curve. This preliminary preparation reduces the computational burden during the iterative EPE minimization process, as the optimization only needs to adjust control points along the pre-defined curve rather than generating everything from scratch.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements a feedback mechanism where the edge placement error (EPE) is calculated after each iteration, and the control points are adjusted based on this feedback. The process continuously monitors the difference between the current pattern and the target pattern, making iterative adjustments to minimize EPE. This feedback loop ensures that computational resources are efficiently allocated to adjustments that actually improve accuracy, avoiding unnecessary computations.

Inventive Principle:
Principle #23Feedback

3Manufacturing precision

If multiple control points are generated and adjusted iteratively, then manufacturing precision is improved, but processing time increases

Engineering Contradiction:
Improvepattern fidelityVSAvoidOPC processing speed
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies local quality by treating different regions of the pattern with different levels of refinement. Corner portions, which are more difficult to correct, receive specialized attention with multiple control points and iterative adjustment, while straighter regions use fewer control points. This localized approach ensures high precision where needed without unnecessarily increasing processing time for simpler regions.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent introduces dynamic adjustment of control points during the optimization process. Rather than using a fixed set of control points, the system dynamically positions control points along the retarget curve line based on the current EPE measurements. This dynamic approach allows the system to adaptively allocate computational resources, focusing iterations on regions that require the most correction while reducing effort in regions that are already well-aligned.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20250172880A1Optical proximity correction (OPC) method, and method of manufacturing mask by using the same
Publication Date: 2025.05.29 SAMSUNG ELECTRONICS CO LTD
  • US20250172880A1 patent drawing
  • US20250172880A1 patent drawing
  • US20250172880A1 patent drawing

AI summary

An optical proximity correction (OPC) method includes generating a retarget curve line of a polygonal pattern layout of a target pattern, generating first control points on the retarget curve line, generating a first curvilinear pattern layout based on the first control points, extracting a contour of the target pattern through a OPC simulation, calculating an edge placement error, determining whether to re-perform the extracting, when it is determined to re-perform the extracting of the contour, shifting the first control points to second control points, and when it is determined not to re-perform the extracting, determining the first curvilinear pattern layout as an OPCed layout. In the shifting, a first starting control point is shifted in a first direction different from a normal direction. After the shifting, the generating of the first curvilinear pattern layout is performed based on the second control points to generate a second curvilinear pattern layout.