Curvilinear OPC Mask Layout for Accurate Semiconductor Patterning
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Solution Overview
Problem
Existing semiconductor fabrication methods face challenges in achieving high accuracy and efficiency in optical proximity correction (OPC) and mask rule check (MRC) processes, leading to distortions and malfunctions in semiconductor devices due to increased integration density.
Innovation Solution
A curvilinear OPC method is employed to generate correction patterns with high accuracy, followed by a mask rule check using width and space skeletons to ensure compliance with mask rules, resulting in clean-up patterns that satisfy specifications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional OPC methods are used, then the fabrication process is simpler, but the correction accuracy is insufficient leading to pattern distortions
Solution Approach 1:
The patent applies curvilinear OPC methods that use curved correction patterns instead of traditional straight-line or angular corrections. This allows for more accurate compensation of optical distortions in photolithography, particularly for curved or rounded features in semiconductor patterns, thereby improving manufacturing precision without excessive complexity increase
2Reliability
If detailed MRC checks are performed, then mask rule compliance is ensured, but the processing time increases
Solution Approach 1:
The MRC process is divided into multiple stages: initial fast checking of critical dimensions, intermediate detailed verification of mask rules, and final validation. This segmentation allows the system to quickly identify and address major compliance issues while performing comprehensive checks only where necessary, reducing overall processing time while maintaining reliability
Solution Approach 2:
The patent implements preliminary MRC checks on the correction patterns generated by OPC before final mask fabrication. By performing early validation and identifying potential compliance issues beforehand, the system can correct problems in the design stage rather than during manufacturing, ensuring mask rule compliance while minimizing rework time
3Manufacturing precision
If curvilinear correction patterns are generated, then optical distortion compensation is improved, but the data processing complexity increases
Solution Approach 1:
The patent introduces intermediate data structures and processing layers that facilitate the generation and management of curvilinear correction patterns. These intermediaries include specialized data formats for representing curved geometries, algorithms for efficient curve fitting and approximation, and modular processing modules that handle different aspects of curvilinear pattern generation separately, thereby managing data processing complexity while maintaining high pattern accuracy
Data Source
AI summary
Provided is a method of fabricating a semiconductor device using a curvilinear OPC method. The method of fabricating the semiconductor device includes performing an optical proximity correction (OPC) step on a layout to generate a correction pattern, the correction pattern having a curvilinear shape, performing a mask rule check (MRC) step on the correction pattern to generate mask data, and forming a photoresist pattern on a substrate using a photomask, which is manufactured based on the mask data. The MRC step includes generating a width skeleton in the correction pattern, generating a width contour, which satisfies a specification of a mask rule for a linewidth, from the width skeleton, and adding the correction pattern and the width contour to generate an adjusting pattern.