CuSbS2 Solar Cell Light Absorption Layer Manufacturing

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Solution Overview

Problem

The high material and equipment costs associated with manufacturing CIGS thin film solar cells, particularly due to the use of toxic hydrogen selenide in the selenization process and the high melting point of CIGS, which complicates grain growth and densification, leading to increased manufacturing costs and inefficiencies.

Innovation Solution

A method for manufacturing a thin film solar cell with a light absorption layer comprising a binary system of Ib group and VIa group elements, using a nano particle slurry with a solvent, binder, and solution precursor, including a Va group element, which allows for a heat treatment process that replaces hydrogen selenide with sulfur powder, enabling lower costs and improved density without amorphous short-circuiting.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If CIGS thin film is used for light absorption layer, then photovoltaic conversion efficiency is improved, but manufacturing cost increases due to toxic hydrogen selenide equipment requirements

Engineering Contradiction:
Improvephotovoltaic conversion efficiencyVSAvoidmanufacturing cost
Core Design Contradiction:
Loss of energyVSEase of manufacture

Solution Approach 1:

The patent extracts and eliminates the toxic hydrogen selenide from the manufacturing process by using alternative materials (sulfur, selenium powders) and methods (low-temperature heat treatment at 300-500°C) that achieve similar or better photovoltaic conversion efficiency without requiring expensive safety equipment

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the temperature parameter from high-temperature processes to low-temperature heat treatment (300-500°C), which enables the use of alternative materials and eliminates the need for toxic hydrogen selenide while maintaining or improving conversion efficiency

Inventive Principle:
Principle #35Parameter changes

2Loss of energy

If CIGS thin film is used for light absorption layer, then photovoltaic conversion efficiency is improved, but equipment cost increases due to safety requirements for toxic hydrogen selenide

Engineering Contradiction:
Improvephotovoltaic conversion efficiencyVSAvoidequipment complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent removes the toxic hydrogen selenide from the process, thereby eliminating the need for complex safety equipment such as gas detection systems, ventilation systems, and specialized handling equipment, while maintaining photovoltaic conversion efficiency through alternative material approaches

Inventive Principle:
Principle #2Taking out (Extraction)

3Manufacturing precision

If high temperature heat treatment is used for CIGS, then grain growth and densification are improved, but manufacturing cost increases due to long processing time

Engineering Contradiction:
Improvegrain growth and densificationVSAvoidprocessing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent changes the temperature parameter to low-temperature range (300-500°C) and adjusts the time parameter to achieve grain growth and densification within 1-10 minutes, eliminating the need for prolonged high-temperature processing while maintaining manufacturing precision

Inventive Principle:
Principle #35Parameter changes

4Manufacturing precision

If CIGS compound nano particles are used, then material density is improved, but amorphous growth causes short-circuiting

Engineering Contradiction:
Improvematerial densityVSAvoidshort-circuiting
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent optimizes the temperature parameter (300-500°C) and time parameter (1-10 minutes) of the heat treatment process to promote crystalline grain growth while suppressing amorphous formation, thereby achieving high material density without short-circuiting and improving device reliability

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces manufacturing costs, enhances the density of the thin film solar cell, and allows for safer processing, with the CuSbS2 compound offering a larger band gap suitable for tandem solar cells, achieving a photovoltaic conversion efficiency of about 2.5%.

Implementation Method 1

manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 2

performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element

Methodology Applied
Scientific EffectHeat treatment: Heating

Implementation Method 3

A solar cell and a power generation system are a technology for directly converting solar energy into electrical energy

Methodology Applied
Scientific EffectPhotovoltaic effect: Photovoltaic Effect

Data Source

PatentUS10096739B2Method for manufacturing light absorption layer of thin film solar cell and thin film solar cell using the same
Publication Date: 2018.10.09 KOREA INST OF ENERGY RES
  • US10096739B2 patent drawing
  • US10096739B2 patent drawing
  • US10096739B2 patent drawing

AI summary

A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s100); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s200); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s300); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer 200 (s400); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s500).