Customized Mask Fabrication for Semiconductor Pattern Alignment
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Solution Overview
Problem
As semiconductor device integration levels increase, existing mask technologies face challenges in minimizing overlap failure between patterns, leading to misalignment and inefficiencies in the manufacturing process.
Innovation Solution
A method for fabricating customized masks involves forming initial patterns in a mold structure, measuring overlap failure, and compensating for pattern positions by shifting and varying the positions of the initial masks based on the measurement results, including high-temperature processes to account for structural changes, to minimize overlap failure between patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional masks are used for patterning, then the manufacturing process can proceed with standard equipment, but overlap failure between patterns occurs leading to misalignment
Solution Approach 1:
The patent applies preliminary action by measuring overlap failure between first and second patterns formed in a mold structure, then fabricating customized masks by compensating for pattern positions before actual device manufacturing. This advance measurement and compensation eliminates misalignment issues during production.
Solution Approach 2:
The patent changes the positional parameters of mask patterns by shifting positions of at least some patterns according to measured overlap failure. This parameter adjustment compensates for systematic errors in the lithography process, improving pattern alignment precision.
2Manufacturing precision
If mask pattern positions are shifted to compensate for overlap failure, then alignment precision improves, but the complexity of mask fabrication increases
Solution Approach 1:
The patent applies self-service by using the mold structure itself to measure overlap failure between patterns. The same structure that forms the patterns also provides the measurement reference, eliminating the need for separate measurement equipment or processes.
Solution Approach 2:
The patent implements feedback by measuring actual overlap failure between first and second patterns, then using this measurement data to fabricate customized masks with compensated positions. This closed-loop approach continuously improves alignment accuracy.
3Manufacturing precision
If high-temperature processes are applied to account for mold structure shrinkage or expansion, then thermal effects are compensated, but the manufacturing process time increases
Solution Approach 1:
The patent applies preliminary action by performing high-temperature processes on the mold structure before forming second patterns to account for thermal shrinkage or expansion. This advance thermal treatment compensates for dimensional changes that would otherwise cause misalignment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces overlap failure between patterns, improving alignment and manufacturing efficiency by adjusting mask positions according to measured deviations, ensuring precise pattern alignment and reducing misalignment issues.
Implementation Method 1
performing a high-temperature process on the mold structure, before forming the second patterns using the initial masks, such that the mold structure shrinks or expands
Data Source
AI summary
A fabricating method of a customized mask includes forming first patterns in a mold structure, forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein, measuring overlap failure between the first patterns and the second patterns, and fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results, wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.