Cut Gate Line Layout for Dense IC Insulation and Low Parasitics
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
There is a need for highly integrated circuit devices that can maintain a stable insulation distance between wirings and contacts within a small device area, while also optimizing performance.
Innovation Solution
The integrated circuit device includes a substrate with fin-type active areas, gate lines, cut gate lines, and power wiring, which are arranged to reduce device area and enhance performance by optimizing the layout and insulation layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the device area is reduced through downscaling, then integration density is improved, but the insulation distance between wirings and contacts becomes insufficient
Solution Approach 1:
The patent introduces a vertical dimension by forming gate separation insulation layers above the gate lines. This stacks insulation functionality in the vertical direction rather than only expanding horizontal insulation distances, allowing reduced device area while maintaining adequate insulation separation between adjacent gate structures.
Solution Approach 2:
The patent segments the gate lines by introducing cut gate lines that divide continuous gate lines into separate sections. Gate separation insulation layers are formed in the gaps between these segmented gate lines, providing localized insulation where needed while reducing overall device area through more efficient space utilization.
2Object-generated harmful factors
If cut gate lines are introduced to improve insulation, then parasitic capacitance is reduced, but device complexity increases
Solution Approach 1:
The patent extracts the insulation function from the continuous gate line structure by introducing discrete cut gate lines and forming gate separation insulation layers in the resulting gaps. This separates the gate lines into independent segments, eliminating parasitic capacitance between adjacent gate sections while adding insulation functionality.
Solution Approach 2:
The gate separation insulation layers act as intermediary elements inserted between segmented gate lines. These insulation layers mediate the electrical isolation between adjacent gate structures, reducing parasitic capacitance while the cut gate lines provide the structural framework for this isolation.
Data Source
AI summary
An integrated circuit device includes substrate including a fin-type active area extending on the substrate in a first direction parallel to an upper surface of the substrate, a first gate line crossing the fin-type active area on the substrate and extending in a second direction perpendicular to the first direction, a cut gate line extending in the second direction and being spaced apart from the first gate line with a first gate cut area therebetween, a second gate line extending in the second direction and being spaced apart from the cut gate line with a second gate cut area therebetween, and a power wiring disposed on the cut gate line.