Cut-Mask Active Region Layout for Semiconductor Corner Rounding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The formation of different-width active regions in semiconductor cell blocks poses challenges during the manufacturing of 3D-stacked semiconductor devices, particularly due to corner rounding issues that affect fabrication precision and device performance.
Innovation Solution
A semiconductor device design that includes active regions with specific out-corner and in-corner edges, where the width gradually changes, and a gate structure that overlaps the out-corner edge, is proposed. This design involves cut-mask patterning to reduce corner rounding and ensure uniform widths along the active regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If different-width active regions are formed in semiconductor cell blocks to implement different logic circuits, then device performance and device density are improved, but fabrication precision deteriorates due to corner rounding issues
Solution Approach 1:
The active region width adjustment is segmented into discrete locations rather than continuous variation. Cut masks are applied at specific segments (in-corner and out-corner edges) to remove rounded portions, enabling different-width active regions while maintaining manufacturing precision through localized corrections.
Solution Approach 2:
Corner rounding removal is applied locally at specific edges (in-corner and out-corner edges) rather than uniformly across the entire active region. The gate structure is positioned to overlap specifically at out-corner edges, providing localized precision correction where needed while preserving the overall different-width design.
2Manufacturing precision
If corner rounding is removed from active regions to improve fabrication precision, then manufacturing precision is improved, but device complexity increases due to additional processing steps
Solution Approach 1:
Cut masks are formed in advance before source/drain region formation to pre-remove corner rounding from active regions. This preliminary action ensures that subsequent processing steps work with precisely defined active region boundaries, improving fabrication precision without adding complexity to later stages.
Solution Approach 2:
Cut masks serve as intermediary structures that facilitate corner rounding removal. These temporary masks are formed, used to define precise active region edges, and then removed, enabling high-precision fabrication without permanently adding complex structures to the final device.
3Manufacturing precision
If gate structure overlaps out-corner edge to maintain uniform widths, then manufacturing precision is improved, but active region deficiency and excess are minimized
Solution Approach 1:
The gate structure is positioned to overlap specifically at out-corner edges where width uniformity is critical, providing localized precision control. This selective positioning ensures uniform widths are maintained at critical locations while minimizing unnecessary material removal elsewhere.
Solution Approach 2:
The gate structure overlapping at out-corner edges converts the potential harm of corner rounding into a benefit by using the gate position itself as a reference to define the precise active region boundary, thereby minimizing both active region deficiency and excess through a single structural feature.
Data Source
AI summary
Provided is a semiconductor device which includes: a 1st active region extended in a 1st direction and including: a 1st out-corner edge at which a width of the 1st active region in a 2nd direction gradually changes along the 1st direction; and a 1st in-corner edge at which the width of the 1st active region less gradually changes along the 1st direction than at the 1st out-corner edge; and a gate structure extended in the 2nd direction and overlapping the 1st out-corner edge in a 3rd direction, wherein the 1st direction horizontally intersects the 2nd direction, and the 3rd direction vertically intersects the 1st direction and the 2nd direction.