Cutoff Probe Microwave Sensing for High-Density Plasma Measurement

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Solution Overview

Problem

The increasing miniaturization and high integration of semiconductor elements have heightened the sensitivity of plasma processes, necessitating precise measurement methods for plasma parameters to ensure product quality.

Innovation Solution

A method and apparatus for measuring plasma parameters using a cutoff probe with line-shaped antennas and processors to calculate microwave band spectra and moving minima, enabling precise plasma density measurement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional measurement methods are used in high-density plasma environments, then measurement capability is maintained, but measurement precision deteriorates due to plasma density effects

Engineering Contradiction:
Improveplasma parameter measurement precisionVSAvoidmeasurement reliability in high-density plasma
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent introduces a cutoff probe as an intermediary measurement device that uses microwave transmission through plasma to indirectly measure plasma parameters. The probe includes a transmit antenna that sends microwaves and a receive antenna that detects transmitted signals, allowing measurement without direct contact with high-density plasma regions where conventional probes fail.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces conventional direct-contact mechanical probe measurement methods with electromagnetic wave-based measurement. Instead of using physical sensors that must be inserted into plasma, the system uses microwave radiation to probe plasma characteristics, eliminating the mechanical intrusion problems that cause measurement failures in high-density environments.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Ease of operation

If direct contact measurement probes are used, then measurement capability is provided, but device complexity and vulnerability increase

Engineering Contradiction:
Improvemeasurement operation capabilityVSAvoidprobe structure complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The cutoff probe serves as an intermediary device that bridges the measurement need and the plasma environment without requiring complex internal sensors. The simple antenna structure transmits and receives microwave signals through the plasma, providing measurement capability while maintaining operational simplicity.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Measurement precision

If conventional probes are exposed to high-density plasma, then measurement function is provided, but probe durability decreases due to plasma damage

Engineering Contradiction:
Improveplasma parameter measurement accuracyVSAvoidprobe operational lifetime
Core Design Contradiction:
Measurement precisionVSDuration of action of stationary object

Solution Approach 1:

The microwave signals act as intermediaries that carry measurement information through the plasma without requiring the probe to remain continuously exposed. The probe can be positioned to transmit signals through the plasma region and retrieve measurements without sustained contact, reducing plasma-induced damage.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The system creates a copy of the plasma interaction through electromagnetic wave transmission. Instead of the probe directly interacting with plasma particles, the microwave signals interact with the plasma and carry information back, allowing measurement without direct material contact that would cause degradation.

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides accurate and reliable measurement of plasma parameters, particularly in high-density plasma environments, thereby enhancing the precision and reliability of semiconductor manufacturing processes.

Implementation Method 1

a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by the at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave that has been emitted by the first antenna and transferred through the plasma

Methodology Applied
Scientific EffectMicrowave radiation: Microwave Radiation

Data Source

PatentUS12222362B2Method of measuring parameters of plasma, apparatus for measuring parameters of plasma, plasma processing system, and method of processing wafer
Publication Date: 2025.02.11 SAMSUNG ELECTRONICS CO LTD
  • US12222362B2 patent drawing
  • US12222362B2 patent drawing
  • US12222362B2 patent drawing

AI summary

An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.