Cu_xSe Thermoelectric Material Broad Temperature ZT
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Solution Overview
Problem
Thermoelectric materials currently exhibit low ZT values at temperatures lower than 600°C, making them unsuitable for efficient thermoelectric conversion over a broad temperature range, particularly for power generation applications.
Innovation Solution
A method for manufacturing Cu x Se thermoelectric materials with 2<x≤2.6 by mixing Cu and Se in powder form, followed by thermal treatment and pressure sintering, which induces Cu-containing particles at grain boundaries, enhancing thermoelectric performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional Cu x Se (x≤2) thermoelectric materials are used, then high ZT values are achieved at temperatures above 600°C, but ZT values become very low at temperatures of 600°C or below
Solution Approach 1:
The patent changes the compositional parameter x in Cu x Se from the conventional range (x≤2) to a new range (2<x≤2.6). This parameter change fundamentally alters the material's thermal and electrical transport properties, enabling high ZT values to be maintained across a broad temperature range from 100°C to 600°C, thus resolving the contradiction between operating temperature range and thermoelectric conversion performance.
2Power
If thermoelectric materials with high ZT at high temperatures are selected, then efficient power generation is possible at high temperature heat sources, but performance degrades in regions with lower temperatures due to temperature gradients
Solution Approach 1:
By modifying the compositional parameter x to exceed 2 (2<x≤2.6), the material's electronic structure and carrier concentration are optimized to maintain high power factor and ZT value across varying temperatures. This enables the material to adapt to different temperature regions within a thermal gradient, ensuring stable power generation efficiency throughout the entire temperature range.
3Ease of manufacture
If Cu x Se with x≤2 is synthesized using conventional methods, then material formation is straightforward, but the resulting material exhibits limited thermoelectric performance at low temperatures
Solution Approach 1:
The patent maintains the simplicity of conventional solid-state reaction synthesis methods while changing the compositional parameter x to 2<x≤2.6. This parameter modification enables the material to form readily through standard mixing and heating procedures, yet produces a thermoelectric material with superior low-temperature performance, thus resolving the contradiction between ease of manufacture and low-temperature reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting thermoelectric material demonstrates high Seebeck coefficients and ZT values across a broad temperature range from 100°C to 600°C, outperforming traditional materials and ensuring stable performance even at low temperatures.
Implementation Method 1
the forming of the compound may be performed by a solid state reaction method
Implementation Method 2
forming a compound by thermally treating the mixture
Implementation Method 3
sintering the compound under pressure
Implementation Method 4
sintering the compound under pressure
Data Source
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AI summary
Disclosed is a method for manufacturing a thermoelectric material having high thermoelectric conversion performance in a broad temperature range. The method for manufacturing a thermoelectric material according to the present disclosure includes forming a mixture by weighing Cu and Se based on the following chemical formula 1 and mixing the Cu and the Se, and forming a compound by thermally treating the mixture: <Chemical Formula 1> CuxSe where 2<x≤2.6.