CVD Chamber Cleaning via Plasma Oxygen Oxidation
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Solution Overview
Problem
In CVD apparatuses, repeated use of fluorine-containing cleaning gases leads to the accumulation of metal compounds on chamber walls, which can detach and adhere to substrates, causing contamination during film formation due to the reaction of metal materials with cleaning gases.
Innovation Solution
A CVD apparatus and method that includes a cleaning gas supply and an oxygen-containing gas supply, where the oxygen-containing gas is introduced after the cleaning gas, with the oxygen-containing gas being plasma-activated and having a higher flow rate and shorter supply time to partially oxidize metal compounds formed during cleaning, reducing their detachment and adherence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a cleaning gas containing a fluorine compound is used to remove deposits from the chamber, then the film component deposits are effectively removed, but metal compounds accumulate on the inner wall surface and may detach to become particles
Solution Approach 1:
The cleaning process is divided into two distinct stages: first using fluorine-containing cleaning gas to remove organic deposits, then using oxygen-containing gas to oxidize and remove metal compounds. This segmentation prevents the accumulation and detachment of metal compounds while maintaining effective deposit removal.
Solution Approach 2:
The patent changes the chemical environment parameter by switching from a fluorine-rich atmosphere to an oxygen-rich atmosphere between cleaning cycles. This parameter change transforms the chamber surface chemistry, converting accumulated metal fluorides into metal oxides that have lower detachment tendency and reduce particle generation.
2Productivity
If repeated cleaning is performed using fluorine-containing cleaning gas, then deposits are continuously removed, but metal compounds accumulate on the inner wall surface of the chamber
Solution Approach 1:
The patent applies preliminary oxidation action by introducing oxygen-containing gas after the fluorine-based cleaning. This preliminary oxidation prevents metal compound accumulation by converting potential metal fluorides into metal oxides that are less likely to accumulate, enabling repeated cleaning cycles without progressive contamination.
Solution Approach 2:
The patent converts the harmful effect of metal compound accumulation into a beneficial process by using the oxygen-containing gas to deliberately oxidize the metal surface. This controlled oxidation creates a stable surface layer that prevents further harmful accumulation and particle generation, turning the potential problem into a protective mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the generation of metal compound particles, improving the efficiency of deposit removal and preventing contamination by forming a passivation film that enhances adhesion to the chamber and susceptor surfaces, thereby maintaining film quality over multiple cycles.
Implementation Method 1
the oxygen-containing gas being plasma-activated and having a higher flow rate and shorter supply time to partially oxidize metal compounds formed during cleaning
Implementation Method 2
the oxygen-containing gas being plasma-activated
Implementation Method 3
forming a passivation film that enhances adhesion to the chamber and susceptor surfaces
Data Source
AI summary
A CVD apparatus includes a chamber, a susceptor, an entry/takeout port for a substrate, and a gate valve provided at the entry/takeout port, in which the susceptor has a mounting plate and a support, the entry/takeout port is provided on a part of a side of the chamber, and is provided in a range from an inner bottom surface of the chamber to a position corresponding to the lower surface of the mounting plate when the susceptor is located at an upper end in the vertical direction, and the inner bottom surface of the chamber, the range from the inner bottom surface of the chamber to the position corresponding to the lower surface of the mounting plate when the susceptor is located at the upper end in the vertical direction, the lower surface of the mounting plate, and the outer side surface of the support are coated with ceramic liners.