CVD Chamber Cleaning With Remote and In-Situ Plasma
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Solution Overview
Problem
Existing methods for cleaning deposition residue in processing chambers are inefficient and time-consuming due to uneven distribution and recombination of reactive cleaning species, leading to incomplete removal of residue in hard-to-reach areas.
Innovation Solution
A combination of remote and in-situ plasma generation is used to introduce reactive cleaning species into the processing chamber, with in-situ plasmas formed at processing stations to supplement remote plasma, enhancing species distribution and concentration, and monitored by impedance to detect cleaning endpoints.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If only remote plasma is used to generate reactive cleaning species, then the cleaning process is simpler to implement, but the distribution of cleaning species is uneven and recombination occurs leading to incomplete residue removal
Solution Approach 1:
The plasma generation system is segmented into two distinct components: a remote plasma source that generates reactive cleaning species and an in-situ plasma source that activates cleaning species directly at the processing station. This segmentation allows each plasma source to perform its specialized function, ensuring complete residue removal while maintaining system manageability through modular design.
Solution Approach 2:
The in-situ plasma acts as an intermediary that activates cleaning species precursors locally at the processing station. This intermediary plasma source converts precursor molecules into reactive cleaning species right where they are needed, overcoming the limitations of remote plasma delivery and ensuring thorough residue removal in hard-to-reach areas.
2Productivity
If remote plasma is used to introduce reactive cleaning species, then the processing chamber can be cleaned, but the cleaning time is excessive and efficiency is low
Solution Approach 1:
The remote plasma source performs preliminary action by generating and delivering cleaning species precursors to the processing chamber before the in-situ plasma activation occurs. This preliminary preparation of cleaning species reduces the overall cleaning cycle time by pre-positioning reactive species in the chamber, allowing the in-situ plasma to quickly activate and complete the cleaning process.
Solution Approach 2:
The system maintains continuous useful action by operating both remote and in-situ plasma sources simultaneously during the cleaning cycle. The remote plasma continuously supplies cleaning species precursors while the in-situ plasma continuously activates them at the processing station, ensuring uninterrupted and efficient residue removal throughout the entire cleaning process.
3Reliability
If reactive cleaning species are introduced without in-situ plasma activation, then the system is easier to operate, but the cleaning is incomplete in hard-to-reach areas
Solution Approach 1:
The in-situ plasma source provides local quality enhancement by activating cleaning species precisely at the processing station where residue removal is most critical. This localized activation ensures that hard-to-reach areas receive concentrated reactive cleaning species, achieving complete residue removal while maintaining straightforward system operation through targeted action.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for more thorough and efficient cleaning of the processing chamber, reducing cleaning time and ensuring complete residue removal by actively monitoring the cleaning process.
Implementation Method 1
a reactive cleaning species generated by a remote plasma is introduced into the processing chamber
Implementation Method 2
forming the in-situ plasma comprises applying radiofrequency (RF) power to a substrate holder within the processing chamber to thereby energize a cleaning species precursor within the processing chamber
Implementation Method 3
The reactive species react to form a carbon film on a substrate
Data Source
AI summary
A method is provided for cleaning deposition residue from a processing chamber of a processing tool. The method comprises introducing a reactive cleaning species generated by a remote plasma into the processing chamber. An in-situ plasma is formed at a processing station within the processing chamber while introducing the reactive cleaning species generated by the remote plasma into the processing chamber.


