CVD Reactor Cleaning via Thermal Response Monitoring
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Solution Overview
Problem
Current methods for removing parasitic depositions from CVD reactor process chambers are inefficient, leading to increased costs and reduced component lifespan due to prolonged etching cycles, which are not adequately controlled to ensure complete removal without over-processing.
Innovation Solution
Monitoring the thermal response of components within or near the process chamber, using temperature measurements to determine when parasitic coatings are sufficiently removed by comparing measured values with predetermined comparison values, allowing for precise termination of the etching process, and employing a temperature control system to maintain a constant heat output or emissivity-based feedback for optimal cleaning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the etching gas is supplied for a specified time in multiple successive phases to remove parasitic depositions, then the cleaning process can be completed, but the etching cycles are prolonged leading to increased costs and reduced component lifespan
Solution Approach 1:
The patent employs a sensor to monitor the thermal response of the susceptor in real-time during the etching process. The measured temperature values are fed back to the control device, which automatically adjusts or terminates the etching gas supply when the susceptor temperature reaches a predetermined threshold, eliminating the need for fixed-duration etching cycles and preventing over-processing.
Solution Approach 2:
The invention changes the control parameter from fixed time duration to temperature-based threshold control. By monitoring the thermal response (temperature) of the susceptor and comparing it against a predetermined comparison value, the etching process is dynamically adjusted to achieve complete cleaning while minimizing cycle time and avoiding component damage.
2Reliability
If the etching cycles are extended to ensure complete removal of parasitic depositions, then cleaning effectiveness is improved, but component lifespan is reduced due to over-processing
Solution Approach 1:
The control device continuously monitors the thermal response of the susceptor and automatically terminates the etching gas supply when the predetermined temperature threshold is reached. This feedback mechanism ensures that etching stops at the optimal point, preventing over-processing that would reduce component lifespan while maintaining effective removal of parasitic depositions.
Solution Approach 2:
The patent applies etching gas only until the temperature threshold is reached, rather than using fixed extended cycles. This partial action approach provides just enough etching to remove parasitic depositions completely without excessive exposure that would damage components, thereby extending component lifespan while maintaining cleaning effectiveness.
3Ease of operation
If fixed-duration etching cycles are used, then the process control is simple, but the costs increase due to prolonged etching and reduced component lifespan
Solution Approach 1:
The control device automatically monitors temperature and manages the etching gas supply based on real-time thermal response data. This automated feedback system maintains operational simplicity while eliminating wasteful prolonged etching cycles, thereby reducing energy consumption and associated costs without requiring complex manual intervention.
4Reliability
If multiple successive etching phases are executed for specified time, then parasitic depositions are removed, but productivity is reduced due to prolonged processing time
Solution Approach 1:
The invention changes the control parameter from fixed time duration to temperature-based threshold control. By monitoring the thermal response of the susceptor and terminating etching when the predetermined temperature is reached, the process achieves complete parasitic deposition removal in shorter time, thereby increasing processing throughput and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures the etching cycle is of sufficient length to remove parasitic depositions effectively while preventing over-processing, thereby reducing costs and extending the life of components by precisely controlling the etching process based on thermal feedback.
Implementation Method 1
a susceptor that can be heated by a heating device
Implementation Method 2
a heating device for the heating of the susceptor
Implementation Method 3
measured values are obtained by monitoring a thermal response of at least one object in, or in the region near, the process chamber
Implementation Method 4
an etching gas, which can contain chlorine, or can be chlorine, is supplied into the process chamber... to remove carbon residues
Implementation Method 5
in the course of the supply of the etching gas, a temperature control body is regulated to a specified temperature, or is heated with a constant heat output
Data Source
AI summary
In a cleaning process for removing parasitic depositions on surfaces of a process chamber of a CVD reactor, a susceptor of the CVD reactor is heated by a heating device, and the susceptor is regulated to a specified temperature or is heated with a constant heat output. Concurrently, an etching gas is supplied to the heated process chamber. The thermal response of at least one object is monitored, in which the thermal response is the temperature of the wide face of a process chamber cover, the wide face facing away from the process chamber. The parasitic depositions influence the emissivity of the surface of the process chamber cover, the emissivity influencing the temperature distribution in the process chamber. The supply of etching gas is terminated when the temperature reaches a comparison value, the temperature changing in response to changes in the surface emissivity during the cleaning process.