CVD Apparatus Gas Supplier Extraction for Uniform Deposition
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Solution Overview
Problem
Current chemical vapor deposition (CVD) methods face limitations in mass production due to structural constraints of the susceptor supporting sapphire wafers and potential blockage of gas suppliers by reactive gas decomposition, leading to non-uniform semiconductor layer deposition on wafers.
Innovation Solution
A CVD apparatus with a reaction chamber design featuring a gas supplier system that includes stem pipes, branch pipes, and spray nozzles to uniformly distribute reactive gases on both surfaces of stacked wafers, preventing gas supplier blockage and enhancing vacuum and mechanical stability, allowing for the growth of semiconductor superlattice structures on multiple wafers simultaneously.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional gas supplier is used inside the reaction chamber, then the semiconductor layer can be deposited on wafers, but the gas supplier becomes blocked due to early decomposition of reactive gas
Solution Approach 1:
The gas supplier is extracted from inside the reaction chamber and positioned outside. The stem pipe extends from the outside of the reaction chamber through the heater into the internal space, allowing reactive gas to be supplied without the gas supplier being exposed to high temperature decomposition environments. This resolves the blockage issue while maintaining deposition uniformity through the pipe system.
Solution Approach 2:
The stem pipe acts as an intermediary component, transporting reactive gas from the external gas supplier through the heater into the reaction chamber. This mediator allows the gas to be supplied without direct contact between the gas supplier and the high-temperature decomposition environment, preventing blockage while ensuring uniform distribution via spray nozzles.
2Productivity
If a susceptor supporting structure is used, then wafers can be held for processing, but mass production capability is limited due to structural constraints
Solution Approach 1:
The wafer processing system is segmented by stacking multiple wafers vertically on the susceptor in a layered arrangement. This segmentation allows multiple wafers to be processed simultaneously in the reaction chamber, significantly improving mass production capability while the gas supplier structure remains relatively simple.
Solution Approach 2:
The processing approach transitions from horizontal single-wafer processing to vertical multi-wafer stacking. By utilizing the vertical dimension for wafer arrangement, the system achieves mass production capability without requiring complex expansion of the horizontal gas distribution structure.
3Manufacturing precision
If reactive gas is supplied through a gas supplier inside the reaction chamber, then semiconductor layers can be formed, but non-uniform deposition occurs due to gas supplier blockage
Solution Approach 1:
The gas supplier is extracted from the reaction chamber environment and positioned externally. This separation prevents the gas supplier from being blocked by reactive gas decomposition, ensuring continuous uniform gas flow and simplifying maintenance operations since the gas supplier is accessible outside the high-temperature chamber.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the mass production of semiconductor superlattice structures on both surfaces of wafers, reducing stress-related defects and improving productivity, especially for large-diameter wafers, by ensuring uniform gas distribution and preventing gas supplier blockage under high-temperature conditions.
Implementation Method 1
CVD apparatus and method of forming semiconductor superlattice structure using the same
Implementation Method 2
a heater disposed at the outside of the reaction chamber and configured to be separable therefrom, the heater being for heating the reaction chamber
Data Source
AI summary
Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.