CVD Polysilazane Flowable Film for Void Filling
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Solution Overview
Problem
In semiconductor manufacturing, existing methods face challenges in filling shallow trench isolation structures without creating voids or gaps, which can lead to defects and performance issues in semiconductor devices, and current flowable films used to address this have lower density and instability.
Innovation Solution
A method involving the introduction of an organosilicon precursor and nitrogen-containing free radicals in a CVD process to generate a polysilazane chain, which is deposited as a flowable film, and subsequent curing and annealing to form a high-quality film with Si—O—Si bonds, effectively filling voids and gaps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the deposition rate of the dielectric material is reduced, then the formation of voids or gaps is reduced, but the production efficiency is reduced
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric material by using organosilicon precursors with specific formulas (I-IV) and controlling the polymerization degree (n=2-50) and molecular weight (40-1000 g/mol) of polysilazane chains. These parameter changes enable the material to achieve both low deposition rate (reducing voids) and high production efficiency through improved flowability and filling characteristics
Solution Approach 2:
The patent creates a composite dielectric material system consisting of polysilazane chains with specific molecular weight ranges and polymerization degrees. This composite material structure combines the benefits of low deposition rate (from controlled polymerization) with high flowability (from optimized molecular weight), resolving the contradiction between filling quality and production efficiency
2Manufacturing precision
If the flowability of the deposited dielectric material is increased, then the voids or gaps are filled quickly, but the film density decreases and stability is reduced
Solution Approach 1:
The patent optimizes the molecular weight parameter to 40-1000 g/mol and polymerization degree n to 2-50, creating a specific parameter range where the material achieves optimal balance between flowability and density. This parameter optimization ensures high void-filling capability while maintaining sufficient film density and stability for semiconductor applications
Solution Approach 2:
The patent applies different molecular weight characteristics to different aspects of the material performance: lower molecular weight components provide high flowability for void filling, while the controlled polymerization degree ensures adequate density and stability. This local quality differentiation within the material structure resolves the contradiction between filling capability and film stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of a high-quality film that quickly fills voids and gaps, avoiding permanent defects and improving the density and stability of the film, thus enhancing semiconductor device performance.
Implementation Method 1
reacting the nitrogen-containing free radical with the organosilicon precursor to generate a polysilazane chain
Implementation Method 2
the polysilazane chain being deposited on the substrate and being flowable on the surface of the substrate, thereby forming the flowable film
Implementation Method 3
curing the flowable film
Implementation Method 4
annealing the cured flowable film to form the film, the film including multiple Si—O—Si bonds
Data Source
AI summary
This application relates to a method for forming a high-quality film by a CVD process. Specifically, this application provides a method for depositing a flowable film on a substrate. The method includes: introducing an organosilicon precursor into a deposition chamber, where the deposition chamber includes the substrate; generating at least one nitrogen-containing free radical in remote plasma; introducing the nitrogen-containing free radical into the deposition chamber; reacting the nitrogen-containing free radical with the organosilicon precursor to generate a polysilazane chain, where the polysilazane chain is deposited on the substrate and flowable on the surface of the substrate, thereby forming the flowable film. According to the method of this application, the polysilazane chain can be generated and flowable on the surface of the substrate, thereby forming the flowable film. The flowable film can quickly fill the voids or gaps, thereby avoiding the formation of permanent defects in the voids or gaps.