CVD Pumping Liner Asymmetric Apertures Gas Flow
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Solution Overview
Problem
In semiconductor manufacturing, achieving uniformity of material deposition across large-scale integrated circuits is challenging due to non-uniform process gas flow and pressure in chemical vapor deposition processes, which affects the reproducibility and yield of semiconductor devices.
Innovation Solution
A pumping liner with a plurality of apertures, where the spacing and orientation of these apertures are unevenly spaced and varied in diameter and shape, is used to improve the uniformity of gas flow and pressure within the processing chamber, enhancing the uniformity of material deposition on substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional pumping liners with uniformly spaced apertures are used, then the structure is simple and easy to manufacture, but the process gas flow and pressure remain non-uniform, leading to poor deposition uniformity
Solution Approach 1:
The patent applies asymmetry by transitioning from uniformly spaced apertures to non-uniformly spaced apertures in the pumping liner. The aperture spacing pattern is deliberately made asymmetric with varying distances between adjacent apertures, which creates more uniform process gas flow and pressure distribution across the substrate, thereby improving deposition uniformity despite increased structural complexity
Solution Approach 2:
The patent applies local quality by making different regions of the pumping liner have different aperture spacing characteristics. Specifically, the spacing between adjacent apertures varies at different locations around the pumping liner, with each local region optimized to achieve uniform gas flow distribution across the substrate surface, rather than applying a single uniform spacing pattern throughout
2Manufacturing precision
If process gas flow is non-uniform, then the pumping liner structure is simple, but the material deposition uniformity across the substrate deteriorates
Solution Approach 1:
The patent uses asymmetric aperture spacing to convert non-uniform gas flow into uniform deposition. By strategically placing apertures at non-uniform intervals, the design compensates for natural gas flow variations, ensuring consistent material thickness across the substrate while maintaining high deposition rates through optimized local flow characteristics
3Manufacturing precision
If uniformly spaced apertures are used in the pumping liner, then the manufacturing process is straightforward, but the process gas velocity and pressure uniformity is poor
Solution Approach 1:
The patent implements asymmetric aperture spacing to achieve uniform process gas pressure. The non-uniform distribution pattern, with varying distances between adjacent apertures, creates a more homogeneous pressure field across the substrate compared to uniform spacing, while the fabrication complexity is managed through systematic design approaches
Solution Approach 2:
The patent applies parameter changes by systematically varying the spacing parameter between adjacent apertures. Instead of maintaining a constant spacing value, the design employs different spacing values at different locations, optimizing the gas flow and pressure distribution to achieve uniformity across the substrate surface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a pumping liner with unevenly spaced and oriented apertures leads to more uniform process gas velocity and pressure, resulting in improved uniformity of material thickness and reduced waste, enhancing the consistency and efficiency of semiconductor material deposition.
Implementation Method 1
A pumping liner with a plurality of apertures, where the spacing and orientation of these apertures are unevenly spaced and varied in diameter and shape, is used to improve the uniformity of gas flow and pressure within the processing chamber
Implementation Method 2
CVD may be used to deposit films of various kinds, including intrinsic and doped amorphous silicon, silicon oxide, silicon nitride, silicon oxynitride and the like. Semiconductor CVD processing is generally done in a vacuum chamber by heating precursor gases which dissociate and react to form the desired film
Implementation Method 3
In order to deposit films at low temperatures and relatively high deposition rates, a plasma can be formed from the precursor gases in the chamber during deposition. Such processes are known as plasma enhanced chemical vapor deposition, or 'PECVD'
Data Source
AI summary
Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.