Segmented Gas Supply for Uniform CVD Wafer Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Batch type chemical vapor deposition apparatuses face challenges in maintaining stable air currents and achieving uniform thin film deposition on multiple wafers due to difficulties in managing the flow of reaction gases.
Innovation Solution
A chemical vapor deposition apparatus with a reaction chamber, wafer boat, and gas supplying system that includes multiple gas pipes and supplying pipes to ensure separate and uniform delivery of reaction gases to each wafer, preventing gas mixing and allowing for adjustable flux control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple wafers are loaded and arranged in a batch type deposition apparatus to increase productivity, then the quantity of wafers processed simultaneously increases, but the stability of air current and uniformity of thin film deposition deteriorate
Solution Approach 1:
The gas supply system is segmented into multiple independent gas pipes, with each pipe dedicated to supplying reaction gas to a specific wafer. This segmentation prevents gas flow interference between adjacent wafers, maintaining stable air currents while enabling batch processing of multiple wafers simultaneously.
Solution Approach 2:
Each wafer position is equipped with its own dedicated gas pipe and supply system, allowing independent control of reaction gas flow to each location. This local quality approach ensures uniform deposition conditions for each wafer while maintaining overall batch processing capability.
2Productivity
If multiple wafers are arranged in a batch type deposition apparatus, then productivity increases, but the stability of air current deteriorates making uniform deposition difficult
Solution Approach 1:
The gas supply system is divided into multiple independent gas pipes, each serving a specific wafer position. This segmentation isolates the gas flow paths, preventing turbulence and instability that would occur with shared gas supply, thereby maintaining stable air currents during batch processing.
Solution Approach 2:
The segmented gas pipe system serves multiple wafers simultaneously while maintaining independent control for each, achieving both batch processing capability and stable gas flow conditions through a multi-functional design.
3Productivity
If reaction gases are supplied to multiple wafers in a batch apparatus, then productivity increases, but gas mixing occurs leading to non-uniform deposition
Solution Approach 1:
The gas supply system is segmented into separate gas pipes for each wafer, preventing mixing of reaction gases between different wafer positions. Each pipe delivers gas independently, ensuring uniform reaction gas distribution across all wafers processed in batch.
Solution Approach 2:
Each wafer receives reaction gas through its own dedicated pipe with localized control, ensuring that gas flow characteristics are optimized for each position independently, thereby preventing mixing and ensuring uniform deposition across all wafers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus maintains stable gas flow and achieves uniform deposition of thin films on multiple wafers by ensuring separate and controlled delivery of reaction gases, addressing issues of non-uniformity and clogging associated with conventional systems.
Implementation Method 1
a chemical vapor deposition apparatus can include: a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers
Data Source
AI summary
A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.