CVD SiC Chamber Component With Deformable Support for Low Contamination
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor manufacturing apparatus components face challenges in achieving low dust generation, low contamination, and cost-effectiveness while maintaining mechanical strength and deformability, with existing materials often having structural defects and high metal content.
Innovation Solution
A SiC member is developed using chemical vapor deposition (CVD) with a deformable first portion and a non-deformable second portion, made of silicon carbide (SiC) to support components in the plasma processing chamber, reducing weight and contamination risks, and allowing for temperature control through hollow structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If traditional semiconductor manufacturing components are used, then structural strength is maintained, but dust generation and contamination increase
Solution Approach 1:
The patent changes the material parameter from traditional metals to silicon carbide (SiC), which fundamentally alters the material properties to achieve both low dust generation and adequate structural strength. The SiC material is specifically selected for its low dust generation characteristics while maintaining necessary mechanical properties for semiconductor manufacturing components.
Solution Approach 2:
The invention employs silicon carbide as a composite material that combines the benefits of ceramic-like low dust generation with improved mechanical strength compared to traditional materials. The SiC material provides a composite structure that resolves the contradiction between strength requirements and contamination reduction.
2Object-generated harmful factors
If heavy materials are used for components, then structural strength is improved, but weight increases leading to higher contamination risks
Solution Approach 1:
The patent changes the density parameter by selecting silicon carbide material, which has lower density than traditional metals used in semiconductor manufacturing components. This parameter change simultaneously reduces weight and contamination risk, as lighter materials generate less contamination in the cleanroom environment.
3Adaptability or versatility
If rigid non-deformable components are used, then structural stability is maintained, but adaptability to thermal expansion and contraction decreases
Solution Approach 1:
The patent introduces deformable portions into the component design, allowing the structure to dynamically adjust to thermal expansion and contraction. The deformable portions are strategically designed to flex or expand/contract with temperature changes while maintaining overall structural stability, resolving the contradiction between rigidity and thermal adaptability.
4Ease of manufacture
If uniform thickness components are used, then manufacturing simplicity is maintained, but localized deformability and strength are compromised
Solution Approach 1:
The patent applies local quality by creating portions with different thicknesses in the component. The first portion has a first thickness while the second portion has a second thickness different from the first. This local variation in thickness allows specific areas to have enhanced strength or deformability as needed, while the overall manufacturing process remains relatively simple using standard deposition techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiC member provides improved mechanical strength, reduced contamination, and cost-effectiveness by being lightweight and deformable, enhancing electric and thermal stability while minimizing dust generation and contamination risks within the plasma processing chamber.
Implementation Method 1
a SiC member in which a SiC film is formed on an outer periphery of a base material by a vapor phase growth film deposition method
Data Source
AI summary
Provided is a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes: a processing chamber; a substrate support provided in the processing chamber and configured to hold a substrate; a plate facing the substrate support and having a gas introduction port; and a cylindrical member configured to support the plate and surround a periphery of the substrate. The plate and the cylindrical member constitute a component of a SiC member having a SiC film deposited by CVD, and the cylindrical member includes a first portion that is deformable under a load.