CVD Silicon Carbide Bulk With Controlled Nitrogen for Precise Etching
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Solution Overview
Problem
Current silicon carbide (SiC) bulk materials used in semiconductor manufacturing lack improved etching characteristics and uniform nitrogen concentration, making them unsuitable for ultra-fine processing and increasing costs due to limited control over nitrogen gas ratios during CVD-SiC production.
Innovation Solution
A chemical vapor deposition (CVD) method using methyltrichlorosilane (MTS), hydrogen, and nitrogen gases to produce SiC with optimized nitrogen concentration and resistance values, incorporating β-SiC and 6H-SiC phases, achieving a nitrogen concentration of 4.0×10^18 atoms/cm^3 or more and a resistance value of 0.3 Ω or less, with comb patterns and controlled grain sizes for enhanced etching characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nitrogen gas is introduced during CVD-SiC deposition to reduce resistivity, then the resistivity decreases and etching characteristics improve, but pores are easily generated and density decreases
Solution Approach 1:
The patent applies parameter changes by precisely controlling the nitrogen gas flow rate (0.05-0.5 L/min) and deposition temperature (1200-1500°C) to achieve optimal nitrogen concentration (1×10^18 to 1×10^19 atoms/cm³) in the SiC bulk. This controlled parameter adjustment allows nitrogen doping to improve etching characteristics while avoiding pore formation that would compromise density, thus resolving the contradiction between improved etching and maintained structural integrity
Solution Approach 2:
The patent implements local quality by creating a specific nitrogen concentration distribution within the SiC bulk, where nitrogen is concentrated at controlled levels (1×10^18 to 1×10^19 atoms/cm³) to enhance etching characteristics in specific regions without causing widespread pore formation. The nitrogen doping is localized to achieve uniform resistance values while maintaining overall density, addressing the contradiction between localized performance improvement and global structural stability
2Manufacturing precision
If nitrogen gas flow rate is increased to achieve uniform nitrogen concentration, then resistance uniformity improves, but pores are more easily generated
Solution Approach 1:
The patent uses parameter changes by establishing specific deposition conditions: nitrogen gas flow rate of 0.05-0.5 L/min, deposition temperature of 1200-1500°C, and deposition time of 1-10 hours. These controlled parameters achieve uniform nitrogen concentration (1×10^18 to 1×10^19 atoms/cm³) throughout the SiC bulk without excessive nitrogen introduction that would cause pore formation, thus resolving the contradiction between concentration uniformity and density maintenance
Solution Approach 2:
The patent applies feedback control by monitoring and adjusting nitrogen gas flow rate and deposition parameters to maintain optimal nitrogen concentration levels. The controlled nitrogen introduction rate is adjusted based on desired concentration uniformity, preventing pore formation while achieving the target uniformity of 1×10^18 to 1×10^19 atoms/cm³, thus resolving the contradiction between manufacturing precision and structural integrity
3Productivity
If CVD-SiC is used to extend usable period and reduce costs, then productivity increases, but etching characteristics and resistance uniformity are insufficient
Solution Approach 1:
The patent applies parameter changes by optimizing nitrogen gas flow rate (0.05-0.5 L/min), deposition temperature (1200-1500°C), and deposition time (1-10 hours) to achieve uniform nitrogen concentration (1×10^18 to 1×10^19 atoms/cm³). This results in resistance values of 0.01-10 Ω with uniformity across the bulk, significantly improving etching characteristics and enabling extended usable period in semiconductor manufacturing, thus resolving the contradiction between productivity and reliability
Solution Approach 2:
The patent implements local quality by creating regions with specific nitrogen concentrations (1×10^18 to 1×10^19 atoms/cm³) that provide enhanced etching resistance and uniform resistance values (0.01-10 Ω). This localized optimization of material properties through controlled nitrogen doping extends the usable period of CVD-SiC components in semiconductor manufacturing processes, resolving the contradiction between extended productivity and improved reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in SiC with improved etching characteristics, increased yield, and reduced costs by extending the usable period, enabling ultra-fine processing while maintaining low resistance and uniform nitrogen concentration.
Implementation Method 1
silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases
Data Source
AI summary
In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases. The SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.